DTC115T [UTC]

NPN DIGITAL TRANSISTOR (BUILT-IN RESISTOR); NPN数字晶体管(内置电阻)
DTC115T
型号: DTC115T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN DIGITAL TRANSISTOR (BUILT-IN RESISTOR)
NPN数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总2页 (文件大小:70K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UTC DTC115T  
NPNDIGITAL TRANSISTOR  
NPN DIGITAL TRANSISTOR  
(BUILT-IN RESISTOR)  
FEATURES  
*Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors.  
*The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input  
They also have the advantage of almost completely  
eliminating parasitic effects.  
2
1
*Only the on / off conditions need to be set for operation,  
making device design easy.  
3
EQUIVALENT CIRCUIT  
MARKING  
CB5T  
C
R1  
SOT-23  
B
1: EMITTER  
2: BASE  
3: COLLECTOR  
E
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
RATING  
UNIT  
V
V
50  
50  
5
100  
200  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Collector Power dissipation  
Junction temperature  
Storage temperature  
V
mA  
mW  
Pc  
Tj  
Tstg  
150  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
BVCBO Ic=50µA  
BVCEO Ic=1mA  
BVEBO IE=50µA  
50  
50  
5
V
V
V
µA  
µA  
V
ICBO  
IEBO  
VCB=50V  
VEB=4V  
0.5  
0.5  
0.3  
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current transfer ratio  
Input resistance  
Transition frequency  
VCE(sat) Ic=1mA, IB=0.1mA  
hFE  
R1  
fT  
VCE=5V, Ic=1mA  
100  
70  
250  
100  
250  
600  
130  
kΩ  
MHz  
VCE=10V, IE=-5mA, f=100MHz  
*
* Transition frequency of the device  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-063,A  
UTC DTC115T  
NPNDIGITAL TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-063,A  

相关型号:

DTC115TA

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
ETC

DTC115TAA

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
ETC

DTC115TAAC2

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATR, 3 PIN
ROHM

DTC115TC

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23
ETC

DTC115TCA

本产品是电阻内置型晶体管。由于内置了偏压用电阻,因此输入侧无需外接电阻即可构成逆变电路。
ROHM

DTC115TCAT117

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SST, 3 PIN
ROHM

DTC115TCAT216

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
ROHM

DTC115TE

Digital transistors (built in resistor)
ROHM

DTC115TE

Digital Transistors (BRT)
ONSEMI

DTC115TET1G

Digital Transistors (BRT) R1 = 100 k R2 = k
ONSEMI

DTC115TETL

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, EMT3, 3 PIN
ROHM

DTC115TETR

暂无描述
ROHM