DTA144TG-AE3-R [UTC]
PNP DIGITAL TRANSISTOR; PNP晶体管数字
| 型号： | DTA144TG-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | PNP DIGITAL TRANSISTOR |
| 文件： | 总3页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTA144T
PNP SILICON TRANSISITOR
PNP DIGITAL TRANSISTOR
(BUILT-IN RESISTOR)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation
to allow positive input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-23
Lead Free
Halogen Free
DTA144TG-AE3-R
1
2
3
DTA144TL-AE3-R
E
B
C
Tape Reel
Note: Pin Assignment: B: Base C: Collector E: Emitter
MARKING
www.unisonic.com.tw
1 of 3
Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R206-065.C
DTA144T
PNP SILICON TRANSISITOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
-5
V
-100
mA
mW
°С
°С
Collector Power Dissipation
Junction Temperature
Storage Temperature
Pc
200
TJ
150
TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=-50μA
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-50
-50
-5
V
V
IC=-1mA
IE=-50μA
VCB=-50V
VEB=-4V
V
-0.5
-0.5
-0.3
μA
μA
V
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
VCE(SAT) IC =-5mA, IB= -0.5mA
hFE
fT
VCE =-5V, IC= -1mA
100 250 600
250
Transition Frequency (Note)
Input Resistance
VCE=-10V, IE=5mA, f=100MHz
MHz
R1
32.9
47
61.1
kΩ
Note: Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-065.C
www.unisonic.com.tw
DTA144T
PNP SILICON TRANSISITOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-065.C
www.unisonic.com.tw
相关型号：
DTA144THT2L
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN
ROHM
DTA144TKAT147
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
ROHM
DTA144TKAT246
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明