D4203DL-T60-K [UTC]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
| 型号： | D4203DL-T60-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
D4203D
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN POWER
TRANSISTOR
DESCRIPTION
The UTC D4203D is a high voltage fast-switching NPN power
transistor. It is characterized by high breakdown voltage, high
current capability, high switching speed and high reliability.
The UTC D4203D is intended to be used in energy-saving
lights, electronic ballasts, high frequency switching power supplies,
high frequency power transforms or common power amplifier, etc.
FEATURES
* High Breakdown Voltage
* High Current Capability
* High Switching Speed
* High Reliability
* High Resistance to Shock
* Built-In Diode
INTERNAL SCHEMATIC DIAGRAM
C (2)
B (1)
E (3)
ORDERING INFORMATION
Ordering Number
Package
TO-126
Pin Assignment
Packing
Bulk
Lead Free
Halogen-Free
D4203DG-T60-K
1
2
3
D4203DL-T60-K
B
C
E
www.unisonic.com.tw
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R204-026.a
D4203D
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector- Base Voltage
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage
700
400
V
9
2.0
V
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature
A
ICP
4.0
A
PC
20
W
°C
°C
TJ
150
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width = 5.0ms, Duty Cycle < 10%.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
6.25
UNIT
°C/W
Junction to Case
θJC
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage
Collector -Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collect - Base Cut-off Current
VCEO(SUS) IC=10mA, IB=0
400
700
9
V
V
BVCBO
BVEBO
ICBO
IC=1mA, IE=0
IE =1mA, IC=0
V
VCB=680V, IE=0
VCE=400V,IB=0
VEB=7V, IC=0
100
50
10
40
40
0.5
2
μA
μA
μA
Collect - Emitter Cut-off Current
Emitter - Base Cut-off Current
ICEO
IEBO
hFE1
VCE =5V, IC=5mA
VCE =10V, IC=200 mA
IC=0.5A, IB=0.1A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A
6
8
DC Current Gain
hFE2
VCE(SAT)1
VCE(SAT)2
VBE(SAT)
tF
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1.8
0.7
4
V
μs
μs
MHZ
Fall Time
Resistive Load
VCC=24 V, IC=2A, IB1=-IB2=0.4A
VCE=10V, IC=0.5A
tS
Storage Time
fT
Current Gain Bandwidth Product
4
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R204-026.a
www.unisonic.com.tw
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