BAS21L-AE3-R [UTC]

GENERAL PURPOSE DIODES; 通用二极管
BAS21L-AE3-R
型号: BAS21L-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

GENERAL PURPOSE DIODES
通用二极管

二极管
文件: 总3页 (文件大小:131K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
BAS21  
Preliminary  
DIODE  
GENERAL PURPOSE DIODES  
„
DESCRIPTION  
The UTC BAS21 is a general purpose diode using UTC’s planar  
technology to provide customers with high current capacity and high  
switching speed.  
„
FEATURES  
* High Current Capability  
* High Switching Speed  
„
SYMBOL  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-23  
Packing  
Tape Reel  
Lead Free  
Halogen Free  
BAS21G-AE3-R  
x: NC  
1
2
3
BAS21L-AE3-R  
x
A
K
Note: Pin Assignment: A: Anode K: Cathode  
„
MARKING  
www.unisonic.com.tw  
1 of 3  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R601-040.a  
BAS21  
Preliminary  
DIODE  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
VR  
RATINGS  
250  
UNIT  
V
Repetitive Peak Reverse Voltage  
Continuous Reverse Voltage  
200  
V
Continuous Forward Current (Note 1)  
Repetitive Peak Forward Current  
IF  
200  
mA  
mA  
A
IFRM  
625  
t=1µs  
9
Non-Repetitive Peak Forward  
Current (Square Wave,  
IFSM  
t=100µs  
t=10ms  
3
A
TJ=25 °C Prior to Surge)  
1.7  
A
Power Dissipation (TA=25°C) (Note 1)  
Junction Temperature  
PD  
TJ  
250  
mW  
°C  
°C  
150  
Storage Temperature  
TSTG  
-65~+150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
RATINGS  
330  
UNIT  
K/W  
Junction to Ambient (Note 1)  
θJA  
Note: 1. Device mounted on an FR4 printed-circuit board.  
„
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified.)  
PARAMETER  
SYMBOL  
VF  
TEST CONDITIONS  
MIN TYP MAX UNIT  
IF=100mA  
IF=200mA  
VR=200V  
1
V
V
Forward Voltage  
1.25  
100  
100  
5
nA  
μA  
pF  
Reverse Current  
IR  
VR=200V, TJ=150°C  
Diode Capacitance  
Reverse Recovery Time  
CD  
TRR  
f=1MHz, VR=0  
when switched from IF=30mA to IR=30mA,  
RL=100, measured at IR=3mA  
50  
ns  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R601-040.a  
www.unisonic.com.tw  
BAS21  
Preliminary  
DIODE  
„
TEST CIRCUITS AND WAVEFOMS  
D.U.T.  
RS=50ꢀ  
SAMPLING  
OSCILLOSCOPE  
IF  
Ri=50ꢀ  
V=VR+IF×RS  
Reverse recovery voltage test circuit  
tr  
tp  
t
10%  
+ IF  
trr  
t
(IR=3mA)  
90%  
VR  
input signal  
output signal  
Reverse recovery voltage waveforms  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R601-040.a  
www.unisonic.com.tw  

相关型号:

BAS21L99Z

Rectifier Diode, 1 Element, 0.2A, Silicon
FAIRCHILD

BAS21LD

High-voltage switching diodeProduction
NEXPERIA

BAS21LDYL

BAS21LD/SOD882/SOD2
ETC

BAS21LL

High-voltage switching diodeProduction
NEXPERIA

BAS21LLYL

BAS21LL/SOD882/SOD2
ETC

BAS21LS

High-speed switching diodeDevelopment
NEXPERIA

BAS21LS-Q

High-speed switching diodeProduction
NEXPERIA

BAS21LT1

CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
MOTOROLA

BAS21LT1

High Voltage Switching Diode
ONSEMI

BAS21LT1

High Voltage Switching Diode
LRC

BAS21LT1G

High Voltage Switching Diode
ONSEMI

BAS21LT3

High Voltage Switching Diode
ONSEMI