9012L-G-T92-B [UTC]
Small Signal Bipolar Transistor;
| 型号： | 9012L-G-T92-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor |
| 文件： | 总3页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
9012
PNP SILICON EPITAXIAL TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
1
FEATURES
TO-92
*High total power dissipation. (625mW)
*High collector current. (-500mA)
*Excellent hFE linearity
*Complementary to UTC 9013
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
9012G-x-T92-B
9012G-x-T92-K
1
E
E
2
B
B
3
C
C
9012L-x-T92-B
TO-92
TO-92
Tape Box
Bulk
9012L-x-T92-K
Note: Pin Assignment: B: Base
E: Emitter
C: Collector
MARKING INFORMATION
PACKAGE
MARKING
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
1 of 3
QW-R201-029.B
9012
PNP SILICON EPITAXIAL TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-40
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
-20
V
-5
V
-500
mA
mW
C
C
Collector dissipation
Junction Temperature
Storage Temperature
PC
625
TJ
150
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=-100μA,IE=0
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
-40
-20
-5
V
V
IC=-1mA, IB=0
IE=-100μA, IC=0
V
VCB=-25V, IE=0
-100
-100
nA
nA
Emitter cutoff current
IEBO
VEB=-3V, IC=0
hFE1
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
64
40
120 300
90
DC current gain
hFE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
VCE(sat)
VBE(sat)
VBE(on)
-0.18 -0.6
-0.95 -1.2
V
V
V
-0.6 -0.67 -0.7
CLASSIFICATION OF hFE1
RANK
D
E
F
G
H
I
RANGE
64-91
78-112
96-135
112-166
144-202
190-300
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R201-029.B
www.unisonic.com.tw
9012
PNP SILICON EPITAXIAL TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristic
DC Current Gain
1000
-50
-40
-30
-20
-10
0
IB=-250μA
500
300
VCE=-1V
IB=-200μA
IB=-150μA
IB=-100μA
100
50
30
IB=-500μA
10
-10
0
-10
-20
-30
-40
-50
-30 -50 -100
-500 -1000
-300
Collector-Emitter Voltage, VCE (V)
Collector Current, IC (mA)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
-1000
1000
500
300
VBE(sat)
VCE=-6V
-500
-300
100
50
30
-100
VCE(sat)
-50
-30
10
5
3
IC=10IB
-10
1
-10
-30 -50 -100
-500 -1000
-1
-300
-3-5 -10
Collector Current, IC (mA)
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R201-029.B
www.unisonic.com.tw
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