8550SCL-AE3-R [UTC]
Transistor;型号: | 8550SCL-AE3-R |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总4页 (文件大小:98K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
8550S
PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL PNP
TRANSISTOR
2
ꢀ FEATURES
1
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
3
ꢀ MARKING
SOT-23
B9
*Pb-free plating product number: 8550SL
ꢀ
PIN CONFIGURATION
PIN NO.
PIN NAME
EMITTER
1
2
3
COLLECTOR
BASE
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Normal
Lead free
8550S-AE3-R
8550SL-AE3-R
SOT-23
Tape Reel
www.unisonic.com.tw
1
Copyright © 2005 Unisonic Technologies Co.,
QW-R206-002,B
8550S
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETERS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
PD
RATING
UNITS
V
-30
-20
V
-5
1
V
Collector Dissipation(Ta=25°C)
Collector Current
W
IC
-700
mA
°C
°C
Junction Temperature
Storage Temperature
TJ
150
TSTG
-40 ~ +150
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=-100µA,IE=0
Ic=-1mA,IB=0
MIN
-30
-20
-5
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
V
IE=-100µA,Ic=0
VCB=-30V,IE=0
VEB=-5V,Ic=0
V
-1
uA
nA
Emitter Cut-off Current
IEBO
-100
V
V
V
CE=-1V,Ic=-1mA
CE=-1V,Ic=-150 mA
CE=-1V,Ic=-500mA
100
120
40
hFE1
hFE2
hFE3
DC Current Gain
110
9.0
400
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat)
VBE(sat)
VBE
Ic=-500mA,IB=-50mA
Ic=500mA,IB=-50mA
VCE=-1V,Ic=-10mA
-0.5
-1.2
-1.0
V
V
V
fT
VCE=-10V,Ic=-50mA
VCB=10V,IE=0, f=1MHz
100
MHz
pF
Cob
CLASSIFICATION OF hFE2
ꢀ
RANK
C
D
E
RANGE
120-200
160-300
280-400
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R206-002,B
8550S
■ TYPICAL CHARACTERICS
PNP EPITAXIAL SILICON TRANSISTOR
Fig.1 Static characteristics
Fig.2 DC current Gain
0.5
0.4
3
I
I
I
B
=3.0mA
=2.5mA
=2.0mA
10
VCE=1V
B
B
2
1
10
10
0.3
0.2
IB
=1.5mA
IB
=1.0mA
IB=0.5mA
0.1
0
0
10
0
0.4
0.8
1.2
1.6
2.0
-1
10
0
1
2
3
10
10
10
10
Collector -Emitter voltage ( V)
Ic,Collector current (mA)
Fig.3 Base-Emitter on Voltage
Fig.4 Saturation voltage
2
1
4
10
10
10
Ic=10*I
B
VCE=1V
3
V
BE(sat)
10
0
2
1
10
10
10
VCE(sat)
-1
10
3
-1
10
0
1
2
0
0.2
0.4
0.6
0.8
1.0
10
10
10
10
Base-Emitter voltage (V)
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output Capacitance
3
2
3
10
10
10
VCE=10V
f=1MHz
2
IE=0
10
1
0
1
0
10
10
10
10
0
1
2
3
0
1
2
3
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Collector -Base voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R206-002,B
8550S
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R206-002,B
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