8050SL-C-T92-R [UTC]

Small Signal Bipolar Transistor, 0.7A I(C), NPN;


型号：	8050SL-C-T92-R
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor, 0.7A I(C), NPN
文件：	总4页 (文件大小：196K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

8050S

NPN SILICON TRANSISTOR

LOW VOLTAGE HIGH

CURRENT SMALL SIGNAL

NPN TRANSISTOR

SOT-23



DESCRIPTION

The UTC 8050S is a low voltage high current small signal NPN

transistor, designed for Class B push-pull audio amplifier and

general purpose applications.



FEATURES

*Collector current up to 700mA

*Collector-Emitter voltage up to 20V

*Complementary to UTC 8550S

TO-92



ORDERING INFORMATION

Ordering Number

Lead Free

Pin Assignment

Packing

Package

Halogen-Free

8050SL-x-AE3-R

8050SL-x-T92-B

8050SL-x-T92-K

8050SL-x-T92-R

8050SG-x-AE3-R

8050SG-x-T92-B

8050SG-x-T92-K

8050SG-x-T92-R

SOT-23

TO-92

Tape Reel

Tape Box

Bulk

Tape Reel



MARKING (For SOT-23 Package)

www.unisonic.com.tw

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QW-R206-001.G

8050S

NPN SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING ( T_A=25°C, unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

700

SOT-23

TO-92

350

Collector Dissipation(T_A=25°C)

P_C

Junction Temperature

Storage Temperature

T_J

+150

-40 ~ +150

°C

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

BV_CBOI_C= 100μA, I_E= 0

BV_CEOI_C= 1mA, I_B= 0

BV_EBOI_E= 100μA, I_C=0

I_CBO

I_EBO

h_FE1

h_FE2

h_FE3

V_CB= 30V,I_E= 0

Emitter Cut-Off Current

V_EB= 5V, I_C= 0

100

V_CE= 1V, I_C= 1mA

V_CE= 1V, I_C= 150 mA

V_CE= 1V, I_C= 500mA

100

120

DC Current Gain (note)

400

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

V_CE(SAT)I_C= 500mA, I_B= 50mA

V_BE(SAT)I_C= 500mA, I_B= 50mA

V_BE(SAT)V_CE= 1V, I_C= 10mA

0.5

1.2

1.0

f_T

V_CE= 10V, I_C= 50mA

100

MHz

Cob

V_CB= 10V, I_E= 0, f = 1MHz

9.0



CLASSIFICATION OF h_FE2

RANK

RANGE

120-200

160-300

280-400

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-001.G

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8050S

NPN SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-001.G

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8050S

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

4 of 4

QW-R206-001.G

www.unisonic.com.tw

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