6N10L-TN3-R [UTC]
6 Amps, 100 Volts N-CHANNEL POWER MOSFET; 6安培， 100伏特N沟道功率MOSFET
| 型号： | 6N10L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 6 Amps, 100 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总4页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
6N10
Preliminary
Power MOSFET
6 Amps, 100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 6N10 is an N-Channel enhancement mode power FET
providing customers with excellent switching performance and
minimum on-state resistance.
1
TO-252
The UTC 6N10 is generally applied in voltage applications, such
as DC motor control, audio amplifier and high efficiency switching
DC/DC converters.
FEATURES
* 6.5A, 100V, RDS(ON) = 0.2Ω @VGS = 10 V
* Fast switching
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-252
Packing
Lead Free
Halogen Free
6N10G-TN3-R
1
2
3
6N10L-TN3-R
G
D
S
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-486.a
6N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
100
±20
6.5
8.0
V
V
A
A
VGS
Continuous
Pulsed
ID
Continuous Drain Current
IDM
Repetitive Avalanche Energy
(Duty Cycle ≤1%)
L = 0.1 mH
EAR
1.25
mJ
Power Dissipation
PD
TJ
16
W
°C
°C
Junction Temperature
Storage Temperature
+150
TSTG
-55~+150
Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
100
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
7.5
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6N10
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
VDS=80V, VGS=0V
1
Drain-Source Leakage Current
µA
VDS=80V, VGS=0V, TJ=125°C
VDS=80V, VGS=0V, TJ=175°C
VGS=+20V, VDS=0V
50
250
Forward
Reverse
+100 nA
-100 nA
A
Gate- Source Leakage Current
IGSS
V
GS=-20V, VDS=0V
On-State Drain Current (Note 2)
ON CHARACTERISTICS
Gate Threshold Voltage
ID(on)
VDS=5V, VGS=10V
8.0
1.0
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3A
3.0
0.160 0.200
0.350
V
ꢀ
S
Static Drain-Source On-State Resistance
(Note 2)
VGS=10V, ID=3A, TJ=125°C
VGS=10V, ID=3A, TJ=175°C
VGS=4.5, ID=1.0A
0.450
0.180 0.225
8.5
Forward Transconductance (Note 2)
DYNAMIC PARAMETERS (Note1)
Input Capacitance
VDS=15V, ID=3A
CISS
COSS
CRSS
240
42
pF
pF
pF
V
GS=0V, VDS=25V, f=1.0MHz
DS=50V, VGS=5V, ID=6.5A
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
Gate to Source Charge (Note 3)
Gate to Drain Charge (Note 3)
Turn-ON Delay Time (Note3)
Rise Time (Note 3)
17
QG
QGS
QGD
tD(ON)
tR
2.7
0.6
0.7
7
4.0
nC
nC
nC
ns
ns
ns
ns
V
11
12
12
14
VDD=50V, RL=7.5ꢀ, ID≈6.5A,
VGEN=10V, RG=2.5 ꢀ
8
Turn-OFF Delay Time (Note 3)
Fall-Time (Note 3)
tD(OFF)
tF
8
9
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C)
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.0
A
Drain-Source Diode Forward Voltage (Note 2)
Reverse Recovery Time
VSD
tRR
IF=6.5A, VGS=0V
0.9
35
1.3
60
V
IF=6.5A, di/dt=100A/µs
ns
Notes: 1. Guaranteed by design, not subject to production testing.
2. Pulse test; pulse width ≤300 ≤μs, duty cycle ≤2%.
3. Independent of operating temperature.
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6N10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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