概述
规格参数
数据手册
替代型号2SK303 概述
Low-Frequency General-Purpose Amplifier Applications 低频通用放大器应用 小信号场效应晶体管
2SK303 规格参数
| 生命周期： | Active | 零件包装代码： | SOT-23 |
| 包装说明： | SMALL OUTLINE, R-PDSO-F3 | 针数： | 3 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.21.00.95 | 风险等级： | 5.19 |
| 配置： | SINGLE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (ID)： | 0.02 A | FET 技术： | JUNCTION |
| JESD-30 代码： | R-PDSO-F3 | 元件数量： | 1 |
| 端子数量： | 3 | 工作模式： | DEPLETION MODE |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 极性/信道类型： | N-CHANNEL |
| 认证状态： | Not Qualified | 表面贴装： | YES |
| 端子形式： | FLAT | 端子位置： | DUAL |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
2SK303 数据手册
通过下载2SK303数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载UTC 2SK303
JFET
Low-Frequency General-Purpose
Amplifier Applications
FEATURES
* Ideal for potentiometers, analog switches, low
frequency amplifiers, constant current supplies, and
impedance conversion.
2
1
3
SOT-23
1: Drain
2: Source 3: Gate
UNIT
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
SYMBOL
VDSS
VGDS
IG
ID
PD
Tj
Tstg
RATINGS
30
-30
10
20
200
V
V
mA
mA
mW
℃
Drain Current
Allowable Power Dissipation
Junctin Temperature
Storage Temperature
150
℃
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
Gate-to-Drain
SYMBOL
V(BR)GDS
IGSS
TEST CONDITIONS
IG=-10μA
MIN
-30
TYP
MAX
UNIT
V
nA
mA
V
mS
pF
pF
Ω
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
VGS=-20V
VDS=10V, VGS=0
VDS=10V, ID=1μA
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
VDS=10mV, VGS=0
-1.0
12.0*
-4
IDSS*
VGS(off)
| yfs |
0.6*
2.5
-1
6.0
5
1.5
250
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Drain-to- Source ON Resistance
CiSS
CrSS
RDS (ON)
CLASSIFICATION OF IDSS
RANK
MARKING CODE
IDSS (mA)
V2
V2
0.6 ~ 1.5
V3
V3
1.2 ~ 3.0
V4
V4
2.5 ~ 6.0
V5
V5
5.0 ~ 12.0
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R206-071,A
UTC 2SK303
JFET
TYPICAL PERFORMANCE CHARACTERISTICS
ID - VDS
ID - VDS
5.0
5
4
3
2
1
4.0
VGS =0
-0.1V
VGS =0
-0.1V
3.0
2.0
1.0
0
-0.2V
-0.3V
-0.4V
-0.2V
-0.3V
-0.4V
0
0
1.0
0
5.0
2.0
3.0
5
10
15
20
30
4.0
25
Drain-to-SourceVoltage, VDS (V)
Drain-to-SourceVoltage, VDS (V)
ID - VGS
ID - VGS
12
10
5
4
3
2
1
0
VDS =10V
VDS =10V
8
6
4
2
0
-1.2
-2.00 -1.75
-1.00 -0.75 -0.50
0
-1.0
-0.8
-0.6
0
-1.50 -1.25
-0.25
-0.4
-0.2
Gate-to-Source Voltage, VGS (V)
Gate-to-Source Voltage, VGS (V)
VGS(off) - IDSS
| yfs |- ID
5
2
VDS = 10V
VDS = 10V
f = 1kHz
ID = 1.0μA
10
3
2
7
5
3
2
-1.0
7
5
1.0
7
5
3
2
3
2
5
7
1.0
10
2
3
2
5
0.1
2
3
5
2
3
5 10
7
2
3
7
7 1.0
Drain Current, ID (mA)
Saturation Drain Current, IDSS (mA)
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R206-071,A
UTC 2SK303
JFET
| yfs | - IDSS
IGDL - VDS
DC
3
2
100n
3
10n
VDS = 10V
VGS = 0V
f = 1kHz
IGDL
D
S
ID
G
3
1n
DC
10
7
3
100p
5
3
10p
3
2
3
1p
ID = 1mA
5
1.0
5
7
1.0
10
2
2
5
0
5
15
20
25
3
7
10
Drain-to-Source Voltage, V DS (V)
Saturation Drain Current, I DSS (mA)
Ciss - VDS
Crss - VDS
5
10
7
5
VGS = 0V
f = 1MHz
VGS = 0V
f = 1MHz
3
2
3
2
10
7
5
1.0
7
5
3
2
3
2
1.0
1.0
2
5 7
7
3
3
5
7
10
2
1.0
2
5
7
7
2
3
3
5 7 10
Drain-to-SourceVoltage, VDS (V)
Drain-to-SourceVoltage, VDS (V)
NF - f
NF - f
16
12
11
10
9
8
7
6
5
4
3
2
1
0
VDS = 10V
VDS = 10V
ID = 3.0mA
Rg = 1kΩ
14
12
10
8
6
4
3.0mA
0.3mA
5
2
0
2
5
2
5
5
2
5
2
5
2
5
2
2
5
2
5
2
2
5
10k
Frequency, f (Hz)
100k
10
100
1k
1M
1M
10
100
1k
Frequency, f (Hz)
10k
100k
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R206-071,A
UTC 2SK303
JFET
RDS(ON) - IDSS
PD - Ta
2
240
200
160
VDS = 10mV
VGS = 0
1000
7
5
120
80
40
0
3
2
100
7
3
5
7
10
2
3
0
20
140 160
120
1.0
2
5
7
3
40
60 80 100
Drain Current, IDSS (mA)
Ambient Temperature, Ta (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R206-071,A
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