2SD669-D-AB3-F-R [UTC]
Transistor;型号: | 2SD669-D-AB3-F-R |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总4页 (文件大小:65K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
ꢀ
APPLICATION
* Low frequency power amplifier
* Complementary pair with UTC 2SB649/A
SOT-89
*Pb-free plating product number: 2SD669/AL
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
B
B
2
C
C
3
E
E
2SD669-x-AB3-F-R
2SD669A-x-AB3-F-R
2SD669L-x-AB3-F-R
2SD669AL-x-AB3-F-R
SOT-89
SOT-89
Tape Reel
Tape Reel
2SD669L-x-AB3-F-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(1) T: Tape Reel
(2) refer to Pin Assignment
(3) AB3: SOT-89
(4) x: refer to Classification of h
FE1
(5)Lead Plating
(5) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R208-036,B
2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base voltage
180
120
160
5
2SD669
Collector-Emitter voltage
VCEO
V
2SD669A
Emitter-Base voltage
Collector Current
VEBO
IC
lC(PEAK)
PC
V
A
1.5
3
Collector Peak Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
A
1
W
℃
℃
TJ
150
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
SYMBOL
BVCBO IC=1mA, IE=0
TEST CONDITIONS
MIN
180
120
160
5
TYP
MAX
UNIT
V
Collector
Breakdown Voltage
to
Emitter 2SD669
2SD669A
BVCEO IC=10mA, RBE=∞
V
Emitter to Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
BVEBO IE=1mA, IC=0
V
V
VCE(SAT) IC=600mA, IB=50mA (note)
1
VBE
ICBO
hFE1
hFE2
hFE1
VCE=5V, IC=150mA (note)
VCB=160V, IE=0
1.5
10
V
Collector Cut-off Current
µA
VCE=5V, IC=150mA (note)
VCE=5V, IC=500mA (note)
VCE=5V, IC=150mA (note)
60
30
60
320
2SD669
DC Current Gain
200
2SD669A
hFE2
fT
VCE=5V, IC=500mA (note)
VCE=5V, IC=150mA (note)
VCB=10V, IE=0, f=1MHz
30
Current Gain Bandwidth Product
Output Capacitance
140
14
MHz
pF
Cob
Note: Pulse test.
CLASSIFICATION OF hFE1
ꢀ
RANK
B
C
D
RANGE
60-120
100-200
160-320
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R208-036,B
www.unisonic.com.tw
2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Typical Transfer Characteristics
500
Area of Safe Operation
VCE=5V
200
3
(13.3V, 1.5A)
100
50
1.0
40V, 0.5A
2SD669A
℃
0.3
0.1
5
7
20
=
5
a
DC Operation (TC=25℃)
(120V, 0.04A)
5
2
T
-
2
10
5
0.03
0.01
(160V, 0.02A)
2SD669
2
1
100
300
1
3
10
30
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage, VCE (V)
Base to Emitter Voltage, VBE (V)
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
300
250
1.2
1.0
℃
5
IC=10 IB
7
=
a
T
5
2
200
150
100
50
0.8
0.6
5
2
-
0.4
0.2
0
℃
5
5
2
7
=
VCE=5V
TC
5
7
1
1
3
10 30 100 300 1,000 3,000
CollectorCurrent, IC (mA)
1
3
10
30
100 300 1,000
CollectorCurrent, IC (mA)
Base to Emitter Saturation Voltage
vs. Collector Current
Gain Bandwidth Product
vs. Collector Current
1.2
240
200
160
120
80
VCE=5V
Ta=25℃
IC=10IB
1.0
0.8
0.6
C
0.4
0.2
0
40
0
1
3
10 30
100 300 1,000
10
30
100
300
1,000
3 of 4
Collector current, IC (mA)
Collector current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R208-036,B
2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
vs. Collector to Base Voltage
200
100
50
f=1MHz
IE=0
20
10
5
2
1
2
5
10 20
50 100
Collector to base voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R208-036,B
www.unisonic.com.tw
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