2SD468_08 [UTC]
LOW FREQUENCY POWER AMPLIFIER; 低频功率放大器
| 型号： | 2SD468_08 |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW FREQUENCY POWER AMPLIFIER |
| 文件： | 总4页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD468
NPN SILICON TRANSISTOR
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
1
TO-92
* Low frequency power amplifier
* Complement to 2SB562
1
TO-92NL
*Pb-free plating product number: 2SD468L
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
E
E
E
E
2
C
C
C
C
3
B
B
B
B
2SD468-x-T92-B
2SD468-x-T92-K
2SD468-x-T9N-B
2SD468-x-T9N-K
2SD468L-x-T92-B
2SD468L-x-T92-K
2SD468L-x-T9N-B
2SD468L-x-T9N-K
TO-92
TO-92
Tape Box
Bulk
TO-92NL
TO-92NL
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 4
QW-R211-003.B
2SD468
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
25
20
V
5
1
V
A
Collector Peak Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
ICP
1.5
A
PC
0.9
W
℃
℃
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
25
20
5
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
BVCBO Ic=10µA, IE=0
BVCEO Ic=1mA, RBE=∞
BVEBO IE=10µA, IC=0
V
V
Collector Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
ICBO
hFE
VCB=20V, IE=0
1
240
0.5
1
µA
VCE=2V, Ic=0.5A (Note)
85
VCE(SAT) Ic=0.8A, IB=0.08A (Note)
0.2
0.79
190
22
V
V
VBE
fT
VCE=2V, Ic=0.5A (Note)
VCE=2V, Ic=0.5A (Note)
VCB=10V, IE=0, f=1MHz
Gain Bandwidth Product
Collector Output Capacitance
Note: Pulse test
MHz
pF
Cob
CLASSIFICATION OF hFE
RANK
B
C
RANGE
85 - 170
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R211-003.B
www.unisonic.com.tw
2SD468
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Transfer Ratio
vs. Collector Current
Typical Transfer Characteristics
VCE=2V
5,000
1,000
VCE=2V
2,000
1,000
500
300
100
30
Ta=75℃
25℃
Ta=75℃
25℃
200
100
50
10
3
20
10
5
1
0
0.2
0.4
0.6
0.8
1.0
1
3
10
30 100 300 1,000
Base to Emitter Voltage, VBE (V)
Collector Current, IC (mA)
UNISONIC TECHNOLOGICO., LTD
3 of 4
QW-R211-003.B
www.unisonic.com.tw
2SD468
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
vs. Collector to Base Voltage
200
100
50
f=1MHz
IE=0
20
10
5
2
5
10 20
50
Collector to Base Voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R211-003.B
www.unisonic.com.tw
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