2SD1857G-P-TM3-T [UTC]
POWER TRANSISTOR;
| 型号： | 2SD1857G-P-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | POWER TRANSISTOR |
| 文件： | 总3页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1857
NPN EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
1
TO-92
FEATURES
* High breakdown voltage.(BVCEO=120V)
* Low collector output capacitance.(Typ.20pF at VCB=10V)
* High transition frequency.(fT=80MHz)
1
TO-92NL
1
TO-251
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
E
E
E
E
E
E
2
3
B
B
B
B
B
B
2SD1857L-x-T92-B
2SD1857L-x-T92-K
2SD1857L-x- T92-R
2SD1857L-x-T9N-B
2SD1857L-x-T9N-K
2SD1857L-x-TM3-T
2SD1857G-x-T92-B
2SD1857G-x-T92-K
2SD1857G-x- T92-R
2SD1857G-x-T9N-B
2SD1857G-x-T9N-K
2SD1857G-x-TM3-T
TO-92
TO-92
C
C
C
C
C
C
Tape Box
Bulk
TO-92
Tape Reel
Tape Box
Bulk
TO-92NL
TO-92NL
TO-251
Tube
Note: Pin Assignment: E: EMITTER C: COLLECTOR B: BASE
www.unisonic.com.tw
1 of 3
Copyright © 2012 Unisonic Technologies Co., LTD
QW-R201-057,F
2SD1857
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
120
120
5
V
V
V
VCEO
VEBO
TO-92NL
0.5
1
Collector Power Dissipation TO-92
TO-251
PC
W
2
Collector Current
IC
ICP
2
A
A
Collector Current
3
Junction Temperature
Storage Temperature
TJ
+150
℃
℃
TSTG
-40 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER SYMBOL TEST CONDITIONS
MIN
120
120
5
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage BVCBO IC=50µA
Collector-Emitter Breakdown Voltage BVCEO IC=1mA
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVEBO IE=50µA
V
ICBO
IEBO
hFE
VCB=100V
1
1
µA
µA
Emitter Cut-Off Current
VEB=4V
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
VCE=5V, IC=0.1A
82
390
0.4
VCE(SAT) IC=/IB=1A/0.1A (Note)
V
fT
VCE=5V, IE= -0.1A, f=30MHz.
80
20
MHz
pF
Output Capacitance
COB
VCB=10V, IE=0A, f=1MHz (Note)
Note: Measured using pulse current.
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R201-057,F
www.unisonic.com.tw
2SD1857
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
1.0
0.8
1000
100mA
90mA
80mA
70mA
TA=25°C
500
200
VCE=10V
60mA
50mA
40mA
100
0.6
0.4
50
5V
20
10
5
30mA
20mA
10mA
0.2
0
2
1
0.01
IB=0mA
0
1
2
3
4
5
0.1 0.2 0.5
1
2
5 10
0.02 0.05
Collector to Emitter Voltage: VCE(V)
Collector Current,IC (A)
10
TA=25°C
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05
0.1 0.2 0.5
1
2
5 10
Collector Current,IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R201-057,F
www.unisonic.com.tw
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