2SD1804-X-TN3-T [UTC]
HIGH CURRENT SWITCHING APPLICATIONS; 大电流开关应用
| 型号： | 2SD1804-X-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH CURRENT SWITCHING APPLICATIONS |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1804
NPN SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATIONS
1
ꢀ
FEATURES
TO-251
* Low collector-to-emitter saturation voltage
* High current and high fT
* Excellent linerarity of hFE.
* Fast switching time
* Small and slim package making it easy to make UTC 2SD1804
applied sets smaller.
1
TO-252
*Pb-free plating product number: 2SD1804L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
B
B
B
2
C
C
C
3
E
E
E
2SD1804-x-TM3-T
2SD1804-x-TN3-R
2SD1804-x-TN3-T
2SD1804L-x-TM3-T
2SD1804L-x-TN3-R
2SD1804L-x-TN3-T
TO-251
TO-252
TO-252
Tube
Tape Reel
Tube
2SD1804L-x-TM3-T
(1)Packing Type
(1) R: Tape Reel, T: Tube
(2)Package Type
(3)Rank
(2) TM3: TO-251, TN3: TO-252
(3) x: refer to Classification of h
FE1
(4)Lead Plating
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-006,C
2SD1804
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
RATINGS
UNIT
V
Collector-Base Voltage
60
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
VEBO
6
V
PD
Tc=25
1
20
W
W
A
Collector Dissipation
℃
Collector Current
IC
8
Collector Current(PULSE)
Junction Temperature
Storage Temperature
IC(PULSE)
TJ
12
A
+150
-55~+150
℃
℃
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
A, IE=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BVCBO IC=10
µ
60
50
6
V
V
V
BVCEO IC=1mA, RBE
=∞
BVEBO IE=10 A, IC=0
µ
ICBO
IEBO
hFE1
hFE2
fT
VCB=40V, IE=0
VEB=4V, IC=0
1
1
µ
µ
A
A
Emitter Cutoff Current
VCE=2V, IC=0.5A
VCE=2V, IC=6A
VCE=5V, IC=1A
VCE=10V, f=1MHz
70
35
400
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
180
65
MHz
pF
mV
V
Cob
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
VCE(SAT) IC=4A, IB=0.2A
VBE(SAT) IC=4A, IB=0.2A
200 400
0.95 1.3
500
tSTG
tF
See test circuit
See test circuit
ns
Fall Time
20
ns
ꢀ
CLASSIFICATION OF hFE1
RANK
Q
R
S
T
RANGE
70-140
100-200
140-280
200-400
UNISONIC TECHNOLOGIES CO., LTD
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2SD1804
NPN SILICON TRANSISTOR
ꢀ
TEST CIRCUIT
PW=20uS
Duty Cycle≤1%
IB1
RB
INPUT
OUTPUT
IB2
RL
VR
50
+
100u
+
470u
25V
-5V
IC=10 IB1= -10 IB2=4A
Unit(resistance: Ω, capacitance: F)
UNISONIC TECHNOLOGIES CO., LTD
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2SD1804
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
10
5
60mA
70mA
25mA
20mA
80mA
8
6
4
3
90mA
100mA
15mA
10mA
40mA
30mA
4
2
1
20mA
10mA
2
0
5mA
IB=0
IB=0
1.6
0
0
0.4
0.8
1.2
IC - VCE
2.0
0
2
4
6
8
10
IC - VCE
Base to Emitter Voltage, VBE (V)
Collector Current, IC (A)
1000
9
VCE=2V
VCE=2V
7
5
Ta=75℃
8
7
3
2
6
5
100
4
3
7
5
Ta=75℃
Ta=25℃
Ta=25℃
Ta=-25℃
3
2
2
1
Ta=-25℃
0
0
10
0.01
5
2 3 5 7
2 3 5 7
2 3
7
2
0.2
0.4
0.8
1.0
0.6
1.2
10
1.0
0.1
hFE - IC
IC - VBE
Colletcor Current, IC (A)
Colletcor to Base Voltage, VCB (V)
5
5
VCE=5V
f=1MHz
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
2 3 5 7
5 7
5 7
5
7
1.0
2
3
5
7
5 7
100
2 3
2 3
2 3
10
1.0
10
0.1
fT - IC
Cob - VCB
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2SD1804
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Collector Current, IC (A)
Collector Current, IC (A)
Ic/IB=20
1000
7
10
7
IC/IB=20
5
5
3
2
3
2
100
7
Ta=75℃
Ta=-25℃
1.0
7
5
3
2
5
Ta=25℃
Ta=25℃
Ta=75℃
3
2
5 7
Ta=-25℃
10
2 3 5
2
2 3 5 7
2
5
3 7
5 7
0.01
2
5 7
5 7
2 3
7
3 5 7
0.1
3
1.0
10
0.01
10
0.1
CE(SAT) - IC
1.0
V
VBE(SAT) - IC
Colletcor to Emitter Voltage, VCE (V)
Ambient Temperature, Ta (℃)
2
10
7
5
3
2
1.0
24
20
16
12
Icp
10ms
1ms
100ms
IC
DC
O
per
at
i
o
DC
n
O
7
5
3
T
C=2
pe
r
5
at
℃
i
on
2
Ta
8
4
=2
0.1
7
5
℃
5
3
2
TC=25℃, One Pulse For
PNP,minus sign is omitted.
No heat sink
1
0
160
0.01
0.1 2 3 5 7
2 3 5 7
A S O
2 3 5 7
100
10
0
20 40 60 80 100 120 140
PD -Ta
1.0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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