2SD1782L-R-AE3-R [UTC]
POWER NPN TRANSISTOR;
| 型号： | 2SD1782L-R-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | POWER NPN TRANSISTOR |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1782
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
POWER NPN TRANSISTOR
DESCRIPTION
The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s
advanced technology to provide customers with high collector-emitter
breakdown voltage, low collector-emitter saturation voltage and high
DC current gain, etc.
FEATURES
* High collector-emitter breakdown voltage
* Low collector-emitter saturation voltage
* High DC current gain
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
SOT-23
Packing
Halogen Free
2SD1782G-x-AE3-R
1
2
3
2SD1782L-x-AE3-R
E
B
C
Tape Reel
MARKING (For SOT-23 Package)
D17
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
1 of 3
Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R206-107.a
2SD1782
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER SYMBOL
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
80
80
V
5
V
0.5
A
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
0.2
W
°C
°C
TJ
150
TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BVCBO IC=50µA
BVCEO IC=2mA
BVEBO IE=50µA
80
80
5
V
V
V
ICBO
IEBO
VCB=50V
VEB=4V
0.5
0.5
µA
µA
V
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
VCE(sat) IC=500 mA, IB=50mA
0.2 0.5
390
hFE
fT
VCE=3V, IC=100mA
120
VCE=10V, IE=-50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
120
MHz
pF
Output Capacitance
Cob
7.5
CLASSIFICATION OF hFE
RANK
Q
R
RANGE
120~270
180~390
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-107.a
www.unisonic.com.tw
2SD1782
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-107.a
www.unisonic.com.tw
相关型号：
2SD1783C7
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1783K
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1784
NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)
TOSHIBA
2SD1784TE12R
TRANSISTOR 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA
2SD1785
Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose)
SANKEN
©2020 ICPDF网 联系我们和版权申明