2SD1664_09 [UTC]
MEDIUM POWER NPN TRANSISTOR; 中功率NPN晶体管
| 型号： | 2SD1664_09 |
| 厂家： | 
Unisonic Technologies |
| 描述： | MEDIUM POWER NPN TRANSISTOR |
| 文件： | 总4页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1664
NPN SILICON TRANSISTOR
MEDIUM POWER
NPN TRANSISTOR
DESCRIPTION
The UTC 2SD1664 is an epitaxial planar type NPN silicon
transistor.
FEATURES
1
*Low VCE(SAT): VCE (SAT)= 0.15V(Typ.)
(IC/IB= 500mA/50mA)
* Complement the 2SB1132.
SOT-89
Lead-free:
2SD1664L
Halogen-free:2SD1664G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
Halogen Free
1
2
3
2SD1664-x-AB3-R
2SD1664L-x-AB3-R 2SD1664G-x-AB3-R
SOT-89
B
C
E
Tape Reel
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R208-025.C
2SD1664
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
VCBO
RATING
UNIT
V
Collector-Base Voltage
40
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
32
V
VEBO
5
V
Collector Current
DC
1
2
A
IC
Collector Current (Duty=1/2, PW=20ms)
Collector Power Dissipation
Junction Temperature
Pulse
A
PC
TJ
0.5
W
°C
°C
+150
-55 ~ +150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
40
32
5
TYP
MAX
UNIT
V
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVCBO IC= 50μA
BVCEO IC= 1mA
BVEBO IE=50μA
V
V
ICBO
IEBO
hFE
VCB=20V
0.5
0.5
390
0.4
μA
μA
VEB= 4V
DC Current Gain
VCE= 3V, Ic= 100mA
82
Collector-Emitter Saturation Voltage
Transition Frequency
VCE(SAT) IC/IB=500mA /50mA
0.15
150
15
V
fT
VCE=5V, IE=-50mA, f=100MHz
MHz
pF
Output Capacitance
Cob
VCB= 10V, IE= 0A, f=1MHz
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R208-025.C
www.unisonic.com.tw
2SD1664
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation Characteristics
Grounded Emitter Output Characteristics
500
500
400
300
2.5mA
4.5
mA
2.0mA
VCE =6V
200
100
50
3.0mA
3.5mA
4.0mA
Ta=100°C
1.5mA
Ta=25°C
Ta= 55°C
1.0mA
0.5mA
20
10
5
200
100
0
2
1
IB =0mA
1.6 2.0
Ta=25°C
1.2
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-Emitter Voltage, VBE(V)
0.4
0.8
0
0
Collector-Emitter Voltage, VCE(V)
DC Current Gain vs.Collector Current (I)
Ta=25°C
DC Current Gain vs.Collector Current (II)
VcE= 3V
2000
2000
1000
500
1000
500
200
200
Ta=100°C
Ta=25°C
VcE= 3V
VcE= 1V
100
50
100
50
Ta= -55°C
1000
1
2
5
10 20
50 100 200 500
1
2
5
10 20
50 100 200 500 1000
Collector Current, IC(mA)
Collector Current, IC(mA)
Collector-Emitter Saturation Voltage vs.
Collector Current (I)
Collector-Emitter Saturation Voltage vs.
Collector Current (II)
0.5
0.2
IC/ IB=10
Ta=25°C
0.5
0.2
0.1
IC/IB=50
0.1
Ta=100°C
IC/IB=20
IC/IB=10
0.05
0.05
Ta=-40°C
Ta=25°C
0.02
0.01
0.02
0.01
1
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
Collector Current, IC(mA)
Collector Current, IC(mA)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R208-025.C
www.unisonic.com.tw
2SD1664
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance vs.Collector-
Base Voltage
Gain Bandwidth Product vs. Emitter Current
100
50
Ta=25°C
VCE =5V
Ta=25°C
f=1MHz
IB=0A
200
20
10
100
50
5
20
-1
-2
-5 -10
-20
-50 -100
1
2
5
10
20
0.5
Emitter Current, IE (mA)
Collector to Base Voltage, VCB(V)
Transient Thermal Resistance
Safe Operation Area
5
1000
Ta=25°C
2
1
100
10
0.5
0.2
0.1
1
0.05
Ta=25°C
0.02
0.01
*Single pulse
0.5
Collector-Emitter Voltage, VCE(V)
0.1
0.001
0.1 0.2
1
2
5
10
20
50
0.01
0.1
1
10
100
1000
Time, t(s)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R208-025.C
www.unisonic.com.tw
相关型号：
2SD1665AM/NP
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
2SD1665AM/NQ
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
2SD1665AMC2/N
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
2SD1665AMC2/NP
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
2SD1665AMC2/NQ
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
©2020 ICPDF网 联系我们和版权申明