2SD1616 [UTC]
NPN EPITAXIAL SILICON TRANSISTOR; NPN外延硅晶体管
| 型号： | 2SD1616 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
*Audio frequency power amplifier
*Medium speed switching
1
TO-92
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Tstg
VALUE
UNIT
°C
Storage Temperature
-55 ~+150
Junction Temperature
Tj
150
750
60
120
50
60
6
°C
Total Power Dissipation (Ta=25°C)
Collector to Base Voltage: D1616
D1616A
Pc
mW
V
VCBO
Collector to Emitter Voltage: D1616
D1616A
VCEO
V
Emitter to Base Voltage
Collector Current (DC)
VEBO
Ic
V
A
A
1
Collector Current (*Pulse)
Ic
2
Note: (*) Pulse width≤10ms, Duty cycle<50%
CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
ICBO
IEBO
TEST CONDITIONS
MIN. TYP. MAX. UNIT
VCB=60V
VEB= 6V
100
100
0.3
nA
nA
V
Collector-Emitter Saturation Voltage VCE(SAT)
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
0.15
0.9
Base-Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain: D1616
D1616A
VBE(SAT)
VBE(ON)
hFE1
1.2
V
600
135
135
81
640
700
600
400
mV
hFE2
fT
VCE=2V, IC=1A
VCE=2V, IC=100mA
VCB=10V, f=1MHz
VCE=10V, IC=100mA
Current Gain Bandwidth Product
Output Capacitance
100
160
MHz
pF
Cob
ton
19
Turn On Time
0.07
us
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-008,A
UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
CHARACTERISTIC
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
IB1=-IB2=10mA
VBE(off)=-2～-3V
MIN. TYP. MAX. UNIT
ts
tf
0.95
0.07
us
us
Classification of hFE1
RANK
Y
G
L
hFE1
135-270
200-400
300-600
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-008,A
UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-008,A
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