2SD1616A-L-AB3-K [UTC]
NPN EPITAXIAL SILICON TRANSISTOR; NPN外延硅晶体管型号: | 2SD1616A-L-AB3-K |
厂家: | Unisonic Technologies |
描述: | NPN EPITAXIAL SILICON TRANSISTOR |
文件: | 总4页 (文件大小:67K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1616/A
NPN SILICON TRANSISTOR
1
NPN EPITAXIAL SILICON
TRANSISTOR
SOT-89
TO-92
SIP-3
ꢀ
DESCRIPTION
* Audio frequency power amplifier
* Medium speed switching
1
1
1
TO-92SP
*Pb-free plating product number:
2SD1616L/2SD1616AL
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
B
E
E
E
E
B
E
E
E
E
2
3
E
B
B
B
B
E
B
B
B
B
2SD1616-x-AB3-R
2SD1616-x-G03-K
2SD1616-x-T92-B
2SD1616-x-T92-K
2SD1616-x-T9S-K
2SD1616A-x-AB3-R
2SD1616A-x-G03-K
2SD1616A-x-T92-B
2SD1616A-x-T92-K
2SD1616A-x-T9S-K
2SD1616L-x-AB3-R
2SD1616L-x-G03-K
2SD1616L-x-T92-B
2SD1616L-x-T92-K
2SD1616L-x-T9S-K
2SD1616AL-x-AB3-R
2SD1616AL-x-G03-K
2SD1616AL-x-T92-B
2SD1616AL-x-T92-K
2SD1616AL-x-T9S-K
SOT-89
SIP-3
C
C
C
C
C
C
C
C
C
C
Tape Reel
Bulk
TO-92
Tape Box
Bulk
TO-92
TO-92SP
SOT-89
SIP-3
Bulk
Tape Reel
Bulk
TO-92
Tape Box
Bulk
TO-92
TO-92SP
Bulk
2SD1616L-x-AB3-T
(1)Packing Type
(2)Package Type
(3)Rank
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) AB3: SOT-89, G03: SIP-3, T92: TO-92,
T9S: TO-92S
(3) x: refer to Classification of h
FE1
(4)Lead Plating
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R201-008,C
2SD1616/A
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25
°C)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
2SD1616
60
Collector to Base Voltage
2SD1616A
2SD1616
120
50
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCEO
V
2SD1616A
60
VEBO
IC
6
V
A
DC
1
2
Pulse(Note2)
ICM
PC
A
Total Power Dissipation
Junction Temperature
Storage Temperature
750
mW
TJ
+150
-55 ~ +150
°
°
C
C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width
ELECTRICAL CHARACTERISTICS (Ta=25
PARAMETER SYMBOL
≤10ms, Duty cycle<50%
ꢀ
°
C, unless otherwise specified.)
TEST CONDITIONS MIN
TYP MAX UNIT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
VCE (SAT) IC=1A, IB=50mA
VBE (SAT) IC=1A, IB=50mA
VBE (ON) VCE =2V, IC =50mA
0.15
0.9
0.3
1.2
V
V
600
640
700
100
100
600
400
mV
nA
nA
Collector Cut-Off Current
ICBO
IEBO
VCB=60V
VEB= 6V
Emitter Cut-Off Current
2SD1616
135
135
81
hFE1
VCE =2V, IC =100mA
DC Current Gain
2SD1616A
hFE2
fT
VCE =2V, IC=1A
Transition Frequency
Output Capacitance
Turn On Time
VCE =2V, IC =100mA
VCB =10V, f =1MHz
100
160
MHz
pF
Cob
tON
tSTG
tF
19
μ
μ
μ
s
s
s
VCE =10V, IC =100mA
IB1 = -IB2 =10mA
0.07
0.95
0.07
Storage Time
Fall Time
VBE(OFF) = -2 ~ -3V
ꢀ
CLASSIFICATION OF hFE1
RANK
Y
G
L
hFE1
135 ~ 270
200 ~ 400
300 ~ 600
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QW-R201-008,C
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2SD1616/A
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
CurrentGain-BandwidthProduct
Collector OutputCapacitance
1000
1000
IE=0
f=1.0MHz
VCE=2V
500
300
500
300
100
100
50
30
50
30
10
5
10
5
3
3
1
0.01 0.03
0.1
0.3
1
3
5
10
1
3
5
10
30 50 100
300
Collector-Base Voltage, VCB (V)
Collector Current, IC (A)
Static Characteristic
Static Characteristic
100
10
IB=5.0mA
A
IB=300μA
IB=3.5mA
m
0
.
A
4
=
m
IB=3.0mA
IB=2.5mA
B
I
5
.
80
60
40
20
0.8
4
IB=250μA
IB=200μA
=
I B
0.6
0.4
0.2
IB=2.0mA
IB=1.5mA
IB=150μA
IB=100μA
IB=50μA
IB=1.0mA
IB=0.5mA
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
10
Collector-Emitter Voltage , VCE (V)
Collector-Emitter Voltage, VCE (V)
Switching Time
10
VCC=10V
IC=10×IB1= -10×IB2
5
3
1
tSTG
0.5
0.3
0.1
tF
0.05
0.03
tON
0.01
0.001 0.003 0.01 0.030.05 0.1
0.30.5
1
CollectorCurrent, IC (A)
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QW-R201-008,C
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2SD1616/A
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Gain
10
1000
VCE=2V
IC=20IB
5
3
500
300
VBE (SAT)
1
100
0.5
0.3
50
30
0.1
10
VCE (SAT)
0.05
0.03
5
3
1
0.01
0.030.05 0.1
0.30.5
1
3 5 10
0.01 0.030.050.1
0.30.5
1
3 5 10
Collector Current, IC (A)
Collector Current, IC (A)
Safe OperatingArea
Power Derating
10
0.8
0.6
5
3
pw=1ms
2
10ms
1
0
0
m
s
0.5
0.3
0.4
0.2
D
C
0.1
0.05
0.03
0.01
0
25 50
75 100 125 150 175 200
1
3
5
10
30 50 100
300
Collector-Emitter Voltage, VCE (V)
AmbientTemperature, Ta (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R201-008,C
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