2SD1060-Q-AB3-R [UTC]
Transistor;型号: | 2SD1060-Q-AB3-R |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总5页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1060
NPN SILICON TRANSISTOR
NPN PLANAR SILICON
TRANSISTOR
1
SOT-89
FEATURES
* Low collector-to-emitter saturation voltage:
1
VCE(SAT)=0.4V max/IC=3A, IB=0.3A
TO-126
1
TO-92
1
TO-220
1
1
TO-252
TO-251
*Pb-free plating product number: 2SD1060L
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
B
B
E
E
B
B
B
B
2
C
C
C
C
C
C
C
C
3
E
E
B
B
E
E
E
E
2SD1060-x-AB3-R
2SD1060-x-T60-K
2SD1060-x-T92-B
2SD1060-x-T92-K
2SD1060-x-TA3-T
2SD1060-x-TM3-T
2SD1060-x-TN3-R
2SD1060-x-TN3-T
2SD1060L-x-AB3-R
2SD1060L-x-T60-K
2SD1060L-x-T92-B
2SD1060L-x-T92-K
2SD1060L-x-TA3-T
2SD1060L-x-TM3-T
2SD1060L-x-TN3-R
2SD1060L-x-TN3-T
SOT-89
TO-126
TO-92
Tape Reel
Bulk
Tape Box
Bulk
TO-92
TO-220
TO-251
TO-252
TO-252
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 5
QW-R208-023.C
2SD1060
NPNSILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
60
50
V
6
V
5
A
Collector Current (Pulse)
ICP
9
A
SOT-89
500
mW
W
TO-126/TO-251
TO-252/TO-220
TO-92
1
2
Collector Dissipation
PC
W
625
mW
℃
℃
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITIONS
MIN
60
50
6
TYP MAX UNIT
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC =1mA, IE=0
BVCEO IC=1mA, RBE =∞
BVEBO IC =0, IE=1mA
V
V
V
ICBO
IEBO
hFE1
hFE2
fT
VCB=40V, IE=0
VEB=4V, IC=0
0.1
0.1
360
mA
mA
Emitter Cut-Off Current
VCE=2V, IC=1A
VCE=2V, IC=3A
VCE =5V, IC =1A
VCB =10V, f=1MHz
70
30
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
30
MHZ
pF
V
Cob
100
VCE(SAT) IC=3A, IB=0.3A
0.4
tON
tSTG
tF
See specified test circuit
0.1
1.4
0.2
µs
Storage Time
See specified test circuit
See specified test circuit
µs
Fall Time
µs
CLASSIFICATION of hFE1
RANK
Q
R
S
RANGE
70-140
100-200
180-360
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-023.C
2SD1060
NPNSILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
IB1
1
OUT
IN
PW=20µs
tr×tf≤15ns
IB2
100
10
50
1µ
1µ
(For PNP, the polarity is
reversed)
10IB1= -10IB2=IC=2A
-5V
20V
Unit (resistance: Ω,capacitance: F)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-023.C
2SD1060
NPNSILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Collector-to-Emitter Voltage
Collector Current vs. Base-to-Emitter Voltage
10
10
450mA
VCE=2V
9
8
7
8
6
6
5
50mA
4
3
4
2
2
1
0
IB=0
2.0
Collector-to-Emitter Voltage, VCE (V)
0
0
0.4
0.8
1.2
1.6
2.4
0
0.2 0.4 0.6
0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE (V)
Collector-Emitter Saturation Voltage vs.
Collector Current
Base-Emitter Saturation Voltage vs.
Collector Current
10
10
IC/IB=20
7
5
3
2
5
3
2
1.0
5
3
2
IC/IB=10
IC/IB=20
1.0
-20℃
25℃
0.1
7
5
5
3
2
3
2
0.01
2
3
5
2
3
5
2
3
5
2
2
3
5
2
3
5
2
3
5
2
0.1
1.0
10
0.1
1.0
10
Collector Current, IC (A)
Collector Current, IC (A)
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2SD1060
NPNSILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Transition Frequency vs. Collector Current
ASO
2
10000
3000
1000
VCE=5V
f=1MHz
TC=25℃
ICP
IC
10
7
5
3
2
300
100
1.0
7
5
30
10
3
2
(Single pulse with
regard to 1 ~ 100ms)
3
1
0.1
5
2
3
71.0
5
7
2
3
5
7 100
0.01 0.03
0.1
0.3
1
3
10
10
Collector Current, IC (A)
Collector-to-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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