2SC4774_10 [UTC]
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA); 高频放大器晶体管，射频开关6V为50mA ）
| 型号： | 2SC4774_10 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA) |
| 文件： | 总4页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC4774
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER
TRANSISTOR, RF SWITCHING
(6V, 50mA)
FEATURES
* Very low output-on resistance (RON).
* Low capacitance.
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
SOT-323
Lead Free
Halogen Free
2SC4774G-AL3-R
1
2
3
2SC4774L-AL3-R
E
B
C
Tape Reel
MARKING
C47
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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2SC4774
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
12
6
V
3
50
V
mA
W
Collector Power Dissipation
Junction Temperature
Storage Temperature
PD
0.2
TJ
+150
-40 ~ +150
°C
°C
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
BVCBO IC =10μA
BVCEO IC =1mA
BVEBO IE =10μA
12
6
V
V
3
V
VCE(SAT) IC/IB =10mA/1mA
0.3
0.5
0.5
560
V
ICBO
IEBO
hFE
fT
VCB =10V
μA
μA
Emitter Cutoff Current
VEB =2V
DC Current Transfer Ratio
Transition Frequency
VCE/IC =5V/5mA
270
VCE =5V, IE = −10mA, f=200MHz
VCB =10V, IE =0A, f=1MHz
IB =3mA, VIN =100mVrms, f=500kHz
300 800
MHz
pF
Output Capacitance
Cob
RON
1
2
1.7
Output-On Resistance
Ω
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R220-017,B
www.unisonic.com.tw
2SC4774
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTIC
Grounded Emitter Output Characteristics (Ⅰ)
Grounded Emitter Output Characteristics (Ⅱ)
50
40
30
20
10
35mA
0.3mA
Ta=25℃
Ta=25℃
30mA
25mA
20mA
8
6
0.2mA
0.1mA
15mA
10mA
4
5mA
2
0
10
0
IB=0μA
IB=0mA
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R220-017,B
www.unisonic.com.tw
2SC4774
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTIC(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R220-017,B
www.unisonic.com.tw
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