2SC4672-X-AB3-R [UTC]
LOW FREQUENCY TRANSISTOR; 低频晶体管
| 型号： | 2SC4672-X-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW FREQUENCY TRANSISTOR |
| 文件： | 总4页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC4672
NPN SILICON TRANSISTOR
LOW FREQUENCY TRANSISTOR
(50V,2A)
DESCRIPTION
The UTC 2SC4672 is a low frequency transistor. Excellent DC
current gain characteristics.
FEATURES
*Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA
*Excellent DC Current Gain Characteristics
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-89
Packing
Normal
Lead Free Plating
Halogen-Free
1
2
3
2SC4672-x-AB3-R 2SC4672L-x-AB3-R 2SC4672G-x-AB3-R
B
C
E
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co.,
1 of 2
QW-R208-004.D
2SC4672
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
NPN SILICON TRANSISTOR
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
60
50
V
6
V
2
5
A
Collector Current (Pulse) (Note 1)
Collector Dissipation
ICP
A
PC
500
mW
°C
°C
Junction Temperature
TJ
+150
-40 ~ +150
Storage Temperature
TSTG
Note: 1.Single pulse, PW=10ms
2.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC =50μA
IC =1mA
IE =50μA
VCB=60V
VEB=5V
MIN
60
50
6
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V
V
0.1
0.1
μA
μA
V
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
VCE(SAT) IC /IB=1A/50mA (Note)
0.1
0.35
400
hFE
fT
VCE=2V, IC =0.5A (Note)
VCE=2V, IE =-0.5A, f=100MHz
VCB=10V, IE =0A,f=1MHz
120
210
25
MHz
pF
Output Capacitance
COB
Note : Measured using pulse current.
CLASSIFICATION OF hFE
■
RANK
A
B
RANGE
120 ~ 240
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R208-004.D
2SC4672
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
S.O.A
IC MAX.(Pulsed)
IC MAX (Continuous)
DC
Collector-Emitter Voltage, VCE(V)
140
120
100
80
60
40
20
0
0.001
0.01
0.1
1
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R208-004.D
2SC4672
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R208-004.D
www.unisonic.com.tw
相关型号：
2SC4672G-A-AB3-R
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3
UTC
2SC4672G-B-AB3-R
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3
UTC
2SC4672T100
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 PIN
ROHM
2SC4672T100/P
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明