2SC3320L-X-T3P-T [UTC]
HIGH VOLTAGE HIGH SPEED SWITCHING; 高电压高开关速度
| 型号： | 2SC3320L-X-T3P-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE HIGH SPEED SWITCHING |
| 文件： | 总5页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,LTD
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
1
TO-3P
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-3P
Packing
Tube
Lead Free
Halogen Free
1
2
3
2SC3320L-x-T3P-T
2SC3320L-x-T3P-T
B
C
E
2SC3320L-x-T3P-T
(1) T: Tube
(2) T3P: TO-3P
(1)Packing Type
(2)Package Type
(3)Rank
(3) x: refer to Classification of hFE1
(4) G: Halogen Free, L: Lead Free
(4)Lead Free
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R214-008,D
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VCEO(SUS)
VEBO
IC
RATINGS
UNIT
V
Collector Base Voltage
500
400
V
Collector Emitter Voltage
400
V
Emitter Base Voltage
Collector Current
7
V
15
5
A
Base Current
IB
A
Power Dissipation
Junction Temperature
Storage Temperature
PD
80
W
℃
℃
TJ
+150
-40 ~ +150
TSTG
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
1.55
UNIT
℃/W
Junction to Case
θJC
ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified.)
PARAMETER
SYMBOL
VCBO
TEST CONDITIONS
ICBO=1mA
ICEO=10mA
MIN TYP MAX UNIT
Collector Base Voltage
500
400
400
7
V
V
VCEO
Collector Emitter Voltage
VCEO(SUS) IC=0.2A
V
Emitter Base Voltage
VEBO
VCE (SAT)
VBE (SAT)
ICBO
IEBO=1mA
V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
1
1.5
1
V
IC=6A, IB=1.2A
V
VCBO=500V
VEBO=7V
mA
mA
IEBO
1
DC Current Gain
hFE
IC=6A, VCE=5V
10
45
0.5
1.5
0.15
tON
μs
μs
μs
IC=7.5A, IB1 =1.5A, IB2=-3A
RL=20Ω, Pw=20μs, Duty ≤ 2%
Switching Time
tSTG
tF
CLASSIFICATION OF hFE
RANK
A
B
C
D
E
F
RANGE
10~15
15~20
20~25
25~30
30~35
35~45
UNISONIC TECHNOLOGIES CO., LTD
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QW-R214-008,D
www.unisonic.com.tw
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
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QW-R214-008,D
www.unisonic.com.tw
2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Base and Collector Saturation Voltage
Safe Operating Area
4
3
30
TC=25℃IC=5IB
10
5
1
VBE(SAT)
PW=1ms
3
0.5
0.3
DC
VCE(SAT)
1
0.5
0.3
0.1
0.05
0.03
0.1
TC=25℃
0.05
0.03
Single Pulse
0.01
0.05 0.1
1
0.3 0.5
3
5
10 20
1
3
5
10
30 50 100
300 5001000
Collector Current, IC (A)
Collector Emitter voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R214-008,D
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2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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