2SC2712_09 [UTC]
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR; 声频放大器NPN晶体管型号: | 2SC2712_09 |
厂家: | Unisonic Technologies |
描述: | AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR |
文件: | 总4页 (文件大小:206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC2712
NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER NPN TRANSISTOR
FEATURES
* High Voltage and High Current:
CEO=50V, IC=150mA (Max.)
V
* Excellent hFE Linearity:
hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
* High hFE
* Low Noise
Lead-free:
2SC2712L
Halogen-free:2SC2712G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
E
E
2
B
B
3
C
C
2SC2712-x-AE3-R 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R
2SC2712-x-AL3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R
SOT-23
Tape Reel
Tape Reel
SOT-323
MARKING
2SC2712-Y
2SC2712-G
2SC2712-L
LY
LG
LL
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R206-029.E
2SC2712
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
60
50
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
5
V
150
mA
mA
mW
°С
Base Current
IB
30
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
150
TJ
+125
-55 ~ +125
TSTG
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=60V, IE=0
MIN
TYP
MAX
0.1
UNIT
μA
Collector Cut-off Current
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
0.1
μA
DC Current Gain
hFE
VCE=6V, IC=2mA
70
80
700
0.25
Collector-Emitter Saturation Voltage
Transistor Frequency
VCE(SAT) IC=100mA, IB=10mA
0.1
V
fT
VCE=10V, IC=1mA
MHz
pF
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
2.0
1.0
3.5
10
VCE=6V, IC=0.1mA
Noise Figure
NF
dB
f=1kHz, Rg=10KΩ
CLASSIFICATION OF hFE
RANK
Y
G
L
RANGE
120~240
200~400
350~700
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-029.E
www.unisonic.com.tw
2SC2712
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
IB - VBE
fT - IC
3000
1000
3000
1000
500
300
Common Emitter
Common Emitter
CE=10V
V
CE=10V
V
Ta=25°С
500
300
100
50
30
Ta=100°С
25°С
-25°С
100
10
5
50
30
3
1
0.5
10
0.3
0.1 0.3
1
3
10 30 100 300
0
0.2 0.4
0.6 0.8 1.0 1.2
Base-Emitter Voltage, VBE (V)
Collector Current, IC (mA)
h Parameter, VCE
Common Emitter
IC=2mA, Ta=25°С, f=270Hz
h Parameter, IC
Common Emitter
VCE=12V, f=270Hz, Ta=25°С
2000
1000
500
2000
1000
500
BL
BL
GR
Y
GR
hre
300
300
Y
100
100
O
BL
GR
hie×KΩ
O
Y
O
hoe×µS
50
50
BL
30
O
30
Y
GR
Y
GR
BL
10
5
3
10
5
3
hoe×µS
BL
O
BL
GR
Y
GR
Y
hie×KΩ
1
0.5
0.3
1
0.5
0.3
O
O
hre×10-4
O
GR
3
hre×10-4
10
BL
Y
0.1
0.1
0.1
0.3
1
30
0.5 1
3
10
30
100 300
Collector Current, IC (mA)
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-029.E
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2SC2712
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
PC - Ta
250
200
150
100
50
0
0
25
50
75
100
125
Ambient Temperature, Ta (°С)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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