2SC2712_09 [UTC]

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR; 声频放大器NPN晶体管
2SC2712_09
型号: 2SC2712_09
厂家: Unisonic Technologies    Unisonic Technologies
描述:

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
声频放大器NPN晶体管

晶体 放大器 晶体管
文件: 总4页 (文件大小:206K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SC2712  
NPN SILICON TRANSISTOR  
AUDIO FREQUENCY  
AMPLIFIER NPN TRANSISTOR  
„
FEATURES  
* High Voltage and High Current:  
CEO=50V, IC=150mA (Max.)  
V
* Excellent hFE Linearity:  
hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)  
* High hFE  
* Low Noise  
Lead-free:  
2SC2712L  
Halogen-free:2SC2712G  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen Free  
1
E
E
2
B
B
3
C
C
2SC2712-x-AE3-R 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R  
2SC2712-x-AL3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R  
SOT-23  
Tape Reel  
Tape Reel  
SOT-323  
„
MARKING  
2SC2712-Y  
2SC2712-G  
2SC2712-L  
LY  
LG  
LL  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R206-029.E  
2SC2712  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
60  
50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
5
V
150  
mA  
mA  
mW  
°С  
Base Current  
IB  
30  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
PC  
150  
TJ  
+125  
-55 ~ +125  
TSTG  
°С  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated)  
PARAMETER  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=60V, IE=0  
MIN  
TYP  
MAX  
0.1  
UNIT  
μA  
Collector Cut-off Current  
Emitter Cut-off Current  
IEBO  
VEB=5V, IC=0  
0.1  
μA  
DC Current Gain  
hFE  
VCE=6V, IC=2mA  
70  
80  
700  
0.25  
Collector-Emitter Saturation Voltage  
Transistor Frequency  
VCE(SAT) IC=100mA, IB=10mA  
0.1  
V
fT  
VCE=10V, IC=1mA  
MHz  
pF  
Collector Output Capacitance  
Cob  
VCB=10V, IE=0, f=1MHz  
2.0  
1.0  
3.5  
10  
VCE=6V, IC=0.1mA  
Noise Figure  
NF  
dB  
f=1kHz, Rg=10KΩ  
CLASSIFICATION OF hFE  
„
RANK  
Y
G
L
RANGE  
120~240  
200~400  
350~700  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-029.E  
www.unisonic.com.tw  
2SC2712  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
IB - VBE  
fT - IC  
3000  
1000  
3000  
1000  
500  
300  
Common Emitter  
Common Emitter  
CE=10V  
V
CE=10V  
V
Ta=25°С  
500  
300  
100  
50  
30  
Ta=100°С  
25°С  
-25°С  
100  
10  
5
50  
30  
3
1
0.5  
10  
0.3  
0.1 0.3  
1
3
10 30 100 300  
0
0.2 0.4  
0.6 0.8 1.0 1.2  
Base-Emitter Voltage, VBE (V)  
Collector Current, IC (mA)  
h Parameter, VCE  
Common Emitter  
IC=2mA, Ta=25°С, f=270Hz  
h Parameter, IC  
Common Emitter  
VCE=12V, f=270Hz, Ta=25°С  
2000  
1000  
500  
2000  
1000  
500  
BL  
BL  
GR  
Y
GR  
hre  
300  
300  
Y
100  
100  
O
BL  
GR  
hie×KΩ  
O
Y
O
hoe×µS  
50  
50  
BL  
30  
O
30  
Y
GR  
Y
GR  
BL  
10  
5
3
10  
5
3
hoe×µS  
BL  
O
BL  
GR  
Y
GR  
Y
hie×K  
1
0.5  
0.3  
1
0.5  
0.3  
O
O
hre×10-4  
O
GR  
3
hre×10-4  
10  
BL  
Y
0.1  
0.1  
0.1  
0.3  
1
30  
0.5 1  
3
10  
30  
100 300  
Collector Current, IC (mA)  
Collector-Emitter Voltage, VCE (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-029.E  
www.unisonic.com.tw  
2SC2712  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
PC - Ta  
250  
200  
150  
100  
50  
0
0
25  
50  
75  
100  
125  
Ambient Temperature, Ta (°С)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-029.E  
www.unisonic.com.tw  

相关型号:

2SC2712_11

NPN Epitaxial Planar Transistor
SECOS

2SC2712_15

NPN Transistors
KEXIN

2SC2713

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
TOSHIBA

2SC2713

Silicon NPN Epitaxial Type
KEXIN

2SC2713

High voltage VCEO=120V High hFE Low noise. Small package.
TYSEMI

2SC2713-BL

Audio Frequency General Purpose Amplifier Applications
TOSHIBA

2SC2713-BL(T5LBSHF

Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA

2SC2713-BL(T5LMATF

Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA

2SC2713-BL,LF

TRANS NPN 120V 0.1A S-MINI
TOSHIBA

2SC2713-BL,LF(B

暂无描述
TOSHIBA

2SC2713-BL,LF(T

Small Signal Bipolar Transistor
TOSHIBA

2SC2713-BLLF(T

Small Signal Bipolar Transistor
TOSHIBA