2SC2688-K-T60-C-K [UTC]
NPN SILICON TRANSISTOR; NPN硅晶体管型号: | 2SC2688-K-T60-C-K |
厂家: | Unisonic Technologies |
描述: | NPN SILICON TRANSISTOR |
文件: | 总5页 (文件大小:193K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON TRANSISTOR
ꢀ
DESCRIPTION
The UTC 2SC2688 is designed for use in Color TV chroma
output circuits.
ꢀ
FEATURES
1
* High Electrostatic-Discharge-Resistance.
ESDR: 1000V TYP. (E-B reverse bias, C=2300pF)
* Low Cre, High fT
Cre ≤3.0 pF (VCB=30V)
fT ≥50MHz (VCE=30V, IE=-10mA)
TO-126
*Pb-free plating product number: 2SC2688L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
TO-126
Normal
Lead Free Plating
1
2
3
2SC2688-x-T60-A-K
2SC2688L-x-T60-A-K
E
C
B
Bulk
2SC2688L-x-T60-A-K
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(1) K: Bulk
(2) refer to Pin Assignment
(3) T60: TO-126
(4) x: refer to Classification of h
FE
(5)Lead Plating
(5) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R204-023,A
2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
300
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
300
V
5.0
V
200
mA
W
Ta=25℃
TC=25℃
1.25
Total Power Dissipation
PD
10
W
Junction Temperature
Storage Temperature
TJ
150
℃
℃
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITIONS
VCE(SAT) IC=20mA, IB=5.0mA
MIN
TYP
MAX
1.5
UNIT
V
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
fT
VCB=200V, IE=0
100
100
250
nA
VEB=5.0V, IC=0
nA
VCE=10V, IC=10mA
VCE=30V, IE=-10mA
VCB=30V, IE=0, f=1.0MHz
40
50
80
80
Gain Bandwidth Product
Feedback Capacitance
MHz
pF
Cre
3
Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2%
ꢀ
CLASSIFICATION OF hFE
Rank
N
M
L
K
Range
40 ~ 80
60 ~ 120
100 ~ 200
16 ~ 250
UNISONIC TECHNOLOGIES CO., LTD
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2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR
Open Collector
TEST CONDITION
1. E-B reverse bias
2.C=2300pF
3. Apply on shot pulse to T.U.T.
(Transistor Under the Test) by SW.
SW.
T.U.T
C=2 300pF
JUDGEMENT
VD
Reject; BVEBO waveform defect
As a result if T.U.T. is not rejected,
apply higher voltage to capacitor and
test again.
UNISONIC TECHNOLOGIES CO., LTD
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2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS (Ta=25℃)
Total Power Dissipation Vs.
Ambinet Temperature
Total Power Dissipation Vs.
Ambinet Temperature
1.5
Free Air
Infinite Heat Sink
10
8
1.25
1.0
6
0.75
4
2
0.5
0.25
0
25 50 75 100 125 150
0
25 50 75 100 125 150175
Ambient Temperature, Ta (℃)
Ambient Temperature, Ta (℃)
Collector Currentvs.
Collector to Emitter Voltage
Collector Currentvs.
Collector to Emitter Voltage
14
3.0
30µA
12
150µA
2.5
2.0
10
20µA
8
6
100µA
1.5
1.0
IB=10µA
4
2
IB=50µA
0.5
0
2
4
6
8
10 12 14
0
50
100
150
Collector TO Emitter Voltage, VCE (V)
Collector TO Emitter Voltage, VCE (V)
Collector Currentvs. Base to
Emitter Voltage
DC Current Gain vs. Collector
Current
70
VCE=10V
VCE=10V
60
50
200
100
40
30
20
10
50
10
5
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base to Emitter Voltage, VBE (V)
0.1 0.51
5 10 50 100 5001000
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Base And Collector Saturation
Voltage vs. Collector Current
Gain Banddwidth Product Vs.
Emitter Current
10.0
5.0
IC=10·IB
VCE=30V
VBE(SAT)
1.0
0.5
200
100
0.1
50
VCE(SAT)
0.05
0.01
10
-1
-5 -10
-50 -100
0.1 0.5 1
5 10 50 100 5001000
Emitter Current, IE (mA)
Collector Current, IC (mA)
Feedback Capacitance
vs.Collectorto Base Voltage
IE=0
f=1MHz
10
5
1
1
5
10
50 100
Collector to Base Voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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2SC2688-L-AZ
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RENESAS
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