2SC2655G-Y-AE3-R [UTC]

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3;
2SC2655G-Y-AE3-R
型号: 2SC2655G-Y-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3

开关 光电二极管 晶体管
文件: 总4页 (文件大小:205K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SC2655  
NPN SILICON TRANSISTOR  
POWER AMPLIFIER  
APPLICATIONS POWER  
SWITCHING APPLICATIONS  
„
FEATURES  
* Low saturation voltage:  
VCE(SAT)= 0.5V (Max.)  
* High speed switching time: tstg=1.0μs (Typ.)  
Lead-free:  
2SC2655L  
Halogen-free: 2SC2655G  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen Free  
1
E
E
E
2
B
C
C
3
C
B
B
2SC2655-x-AE3-R 2SC2655L-x-AE3-R 2SC2655Gx-AE3-R  
2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B  
2SC2655-x-T9N-K 2SC2655L-x-T9N-K 2SC2655Gx-T9N-K  
SOT-23  
TO-92NL  
TO-92NL  
Tape Reel  
Tape Box  
Bulk  
www.unisonic.com.tw  
1 of 4  
Copyright © 2009Unisonic Technologies Co., Ltd  
QW-R211-013.E  
2SC2655  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETER  
SYMBOL  
VCBO  
RATING  
UNIT  
V
Collector-Base Voltage  
50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCEO  
50  
V
VEBO  
5
V
Ic  
2
3
A
Collector Current(Pulse)  
Base Current  
Icp(Note 1)  
IB  
A
0.5  
A
SOT-23  
350  
Collector Power Dissipation  
Pc  
mW  
TO-92NL  
900  
Junction Temperature  
TJ  
150  
°C  
°C  
Storage Temperature  
TSTG  
-55 ~ +150  
Note: 1. PW16ms, Duty Cycle50%.  
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCEO  
ICBO  
TEST CONDITIONS  
IC= 10mA, IB= 0  
MIN  
50  
TYP  
MAX UNIT  
V
Collector Emitter Breakdown Voltage  
Collector Cut-off Current  
VCB=50V, IE= 0  
VEB= 5V, IC=0  
1.0  
1.0  
μA  
μA  
Emitter Cut-off Current  
IEBO  
hFE(1)  
VCE=2V, Ic=0.5A  
VCE=2V, Ic=1.5A  
70  
40  
240  
DC Current Gain  
hFE(2)  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
Transition Frequency  
VCE(SAT) IC=1A, IB=0.05A  
0.5  
1.2  
V
V
VBE(SAT)  
fT  
IC=1A, IB=0.05A  
VCE=2V, IC=0.5A  
100  
30  
MHz  
pF  
Collector Output Capacitance  
Cob  
VCB= 10V, IE= 0, f=1MHz  
Switching Time(Turn-on Time)  
tON  
0.1  
μS  
IB1= -IB2=0.05A  
DUTY CYCLE1%  
„
CLASSIFICATION OF hFE(1)  
RANK  
O
Y
RANGE  
70-140  
120-240  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R211-013,E  
www.unisonic.com.tw  
2SC2655  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
VCE-Ic  
Ic-VCE  
1
2.4  
2.0  
Common Emitter  
Ta=25°С  
25  
20  
0.8  
18  
15  
12  
IB=5mA  
Common  
Emitter  
Ta=25°С  
1.6  
1.2  
0.8  
0.6  
0.4  
10  
20  
10  
8
6
30  
40  
4
0.2  
0
IB=2mA  
0.4  
0
0
0.4 0.8 1.2  
1.6  
2.4  
2.0  
0
2
4
6
14  
8
10  
12  
Collector Current, Ic (A)  
Collector -Emitter Voltage, VcE(V)  
VCE-Ic  
VCE-Ic  
1
1
IB=5mA  
Common EmitterTa= -55°С  
0.8  
0.8  
0.6  
0.4  
0.6  
0.4  
IB=5mA  
20  
10  
20  
30  
10  
30  
40  
40  
50  
0.2  
0
0.2  
0
Common Emitter  
Ta=100°С  
0
0.4 0.8 1.2  
0
0.4 0.8 1.2  
1.6  
2.4  
1.6  
2.4  
2.0  
2.0  
Collector Current, Ic (A)  
Collector Current, Ic (A)  
hFE -Ic  
VCE(SAT) -Ic  
1000  
1
Common Emitter  
Ic/IB=20  
Common Emitter  
VCE=2V  
500  
300  
0.5  
0.3  
Ta=25°С  
Ta=100°С  
100  
0.1  
0.05  
0.02  
Ta=100°С  
Ta=-55°С  
50  
30  
Ta=25°С  
Ta=-55°С  
0.3  
0.5  
10  
0.01  
0.3  
Collector Current, Ic (A)  
1
0.03  
0.1  
1
0.01  
0.03 0.05 0.1  
Collector Current, Ic (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R211-013,E  
www.unisonic.com.tw  
2SC2655  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
VBE(SAT) -Ic  
Ic-VBE  
5
3
2.0  
Common Emitter  
VCE=2 V  
Common Emitter  
Ic/IB=20  
1.5  
1.0  
Ta=-55°С  
Ta=100°С  
Ta=25°С  
1
Ta=-55°С  
0.5  
0.3  
Ta=25°С  
Ta=100°С  
0.5  
0
0.1  
0.01  
0.3  
1
0.03 0.05 0.1  
0
0.4  
0.8  
1.2  
1.6  
2.0  
Collector Current, Ic (A)  
Base -Emitter Voltage, VBE(V)  
Pc-Ta  
Safe Operating Area  
5
3
1000  
800  
Ic MAX.(PULSED)*  
1ms*  
10ms*  
1
100ms*  
600  
0.5  
0.3  
1s*  
DC Operation  
400  
200  
0
Ta=25°С  
0.1  
Single Nonrepetitive Pulse  
Ta=25°С  
0.05  
0.0  
3
0.0  
Curves Must Be Derated Linearly With  
Increase In Temperature  
0
40  
80  
120 160  
200 240  
VCEO MAX.  
Ambient Temperature,Ta С)  
1
0.2  
0.5  
1
3
10 30  
100  
Collector-Emitter Voltage, VCE(V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R211-013,E  
www.unisonic.com.tw  

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