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2SC2235L-Y-T9N-K [UTC]

Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92NL, 3 PIN;
2SC2235L-Y-T9N-K
型号： 2SC2235L-Y-T9N-K
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92NL, 3 PIN

放大器 晶体管
文件： 总4页 (文件大小：100K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
2SC2235  
NPN SILICON TRANSISTOR  
AUDIO POWER AMPLIFIER  
APPLICATIONS DRIVER STAGE  
AMPLIFIER APPLICATIONS  
1
TO-92  
FEATURES  
* Complimentary to UTC 2SA965  
1
TO-92NL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
E
E
E
E
E
E
2
3
B
B
B
B
B
B
TO-92  
TO-92  
C
C
C
C
C
C
2SC2235L-x-T92-B  
2SC2235L-x-T92-K  
2SC2235L-x-T92-R  
2SC2235L-x-T9N-B  
2SC2235L-x-T9N-K  
2SC2235L-x-T9N-R  
2SC2235G-x-T92-B  
2SC2235G-x-T92-K  
2SC2235G-x-T92-R  
2SC2235G-x-T9N-B  
2SC2235G-x-T9N-K  
2SC2235G-x-T9N-R  
Tape Box  
Bulk  
TO-92  
Tape Reel  
Tape Box  
Bulk  
TO-92NL  
TO-92NL  
TO-92NL  
Tape Reel  
Note: Pin Assignment: B: BASE C: COLLECTOR E: EMITTE  
www.unisonic.com.tw  
1 of 4  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R211-012.C  
2SC2235  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
120  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
120  
V
5
V
800  
mA  
mA  
mW  
°C  
Emitter Current  
IE  
-800  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
PC  
600  
TJ  
150  
TSTG  
-55 ~ +150  
°C  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
VBCEO IC =10mA, IB=0  
VBEBO IE=1mA, IC =0  
120  
5
V
V
ICBO  
IEBO  
hFE  
VCB=120V, IE=0  
VEB=5V, IC=0  
100  
100  
240  
1.0  
nA  
nA  
Emitter Cut-off Current  
DC Current Gain  
VCE=5V, IC =100mA  
80  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
VCE(SAT) IC =500mA, IB=50mA  
V
V
VBE  
fT  
VCE=5V, IC =500mA  
VCE=5V, IC =100mA  
VCB=10V, IE=0,f=1MHz  
1.0  
Transition Frequency  
120  
MHz  
pF  
Collector Output Capacitance  
Cob  
30  
CLASSIFICATION OF hFE  
RANK  
Y
O
RANGE  
120-240  
80-160  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R211-012.C  
www.unisonic.com.tw  
2SC2235  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Collector Current vs. Collector Emitter  
Voltage  
DC Current Gain vs. Collector Current  
1000  
800  
1000  
Common Emitter  
TA=25°C  
Common Emitter  
VCE=5V  
500  
300  
10  
15  
7
TA=100°C  
5
4
3
2
600  
400  
200  
100  
TA=25°C  
TA=-25°C  
50  
30  
10  
IB=1mA  
0
0
3
100 300  
1000  
0
10  
30  
2
4
6
8
10 12 14  
Collector Emitter Voltage, VCE (V)  
Collector Current, Ic (mA)  
Collector Emitter Saturation Voltage vs.  
Collector Current  
Collector Current vs. Base Emitter  
Voltage  
0.5  
0.3  
800  
600  
400  
200  
0
Common Emitter  
Ic/IB =10  
Common Emitter  
CE=5V  
V
TA=100°C  
TA=100°C  
TA=25°C  
TA=-25°C  
0.1  
0.05  
0.03  
TA=25°C  
TA=-25°C  
0.01  
0
0.2  
0.4  
0.6  
0.8 1.0 1.2  
3
10  
30  
100 300  
1000  
Collector Current, Ic (mA)  
Base Emitter Voltage, VBE (V)  
Collector Power Dissipaton vs. Ambient  
Temperature  
Safe Operating Area  
1000  
800  
3000  
Ic Max.(Pulse) *  
1ms *  
10ms *  
1000  
500  
Ic Max. (Continous)  
300  
600  
100  
DC Operation  
50  
30  
400  
200  
0
10  
5
3
*Single Nonrepetitive Pulse TA=25°C  
Curve must be derated linearly with  
increase in temperature  
1
0.5  
1
3 5 10 30 50 100 300 5001000  
0
20 40 60 80 100 120 140 160  
Ambient Temperature, TA (°C)  
Collector Emitter Voltage, VCE (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R211-012.C  
www.unisonic.com.tw  
2SC2235  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R211-012.C  
www.unisonic.com.tw  

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