2SC2235-X-T9N-B [UTC]
AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS; 音频功率放大驱动级放大器应用型号: | 2SC2235-X-T9N-B |
厂家: | Unisonic Technologies |
描述: | AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS |
文件: | 总4页 (文件大小:100K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC2235
NPN SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
APPLICATIONS DRIVER STAGE
AMPLIFIER APPLICATIONS
FEATURES
* Complimentary to UTC 2SA965
Lead-free:
2SC2235L
Halogen-free: 2SC2235G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
E
E
2
C
C
3
B
B
Tape Box
Bulk
2SC2235-x-T9N-B 2SC2235L-x-T9N-B 2SC2235G-x-T9N-B
2SC2235-x-T9N-K 2SC2235L-x-T9N-K 2SC2235G-x-T9N-K
TO-92NL
TO-92NL
www.unisonic.com.tw
1 of 4
Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R211-012.B
2SC2235
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
120
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
120
V
5
V
800
mA
mA
mW
°C
Emitter Current
IE
-800
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
900
TJ
150
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
VBCEO IC =10mA, IB=0
VBEBO IE=1mA, IC =0
120
5
V
V
ICBO
IEBO
hFE
VCB=120V, IE=0
VEB=5V, IC=0
100
100
240
1.0
nA
nA
Emitter Cut-off Current
DC Current Gain
VCE=5V, IC =100mA
80
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) IC =500mA, IB=50mA
V
V
VBE
fT
VCE=5V, IC =500mA
VCE=5V, IC =100mA
VCB=10V, IE=0,f=1MHz
1.0
Transition Frequency
120
MHz
pF
Collector Output Capacitance
Cob
30
CLASSIFICATION OF hFE
RANK
Y
O
RANGE
120-240
80-160
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R211-012.B
www.unisonic.com.tw
2SC2235
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Collector Emitter
Voltage
DC Current Gain vs. Collector Current
1000
800
1000
Common Emitter
Common Emitter
VCE=5V
Ta =25°C
10
500
300
15
7
Ta=100°C
600
400
200
5
4
3
100
Ta=25°C
Ta=-25°C
50
30
10
2
IB=1mA
0
0
3
100 300
1000
0
10
30
2
4
6
8
10 12 14
Collector Emitter Voltage, VCE (V)
Collector Current, Ic (mA)
Collector Emitter Saturation Voltage vs.
Collector Current
Collector Current vs. Base Emitter
Voltage
0.5
0.3
800
600
400
200
0
Common Emitter
Ic/IB =10
Common Emitter
CE=5V
V
Ta=100°C
Ta=100°C
Ta=25°C
Ta=-25°C
0.1
0.05
0.03
Ta=25°C
Ta=-25°C
0.01
0
0.2
0.4
0.6
0.8 1.0 1.2
3
10
30
100 300
1000
Collector Current, Ic (mA)
Base Emitter Voltage, VBE (V)
Collector Power Dissipaton vs. Ambient
Temperature
Safe Operating Area
1000
800
3000
Ic Max.(Pulse) *
1ms *
10ms *
1000
500
Ic Max. (Continous)
300
600
100
DC Operation
50
30
400
200
0
10
5
3
*Single Nonrepetitive Pulse Ta=25°C
Curve must be derated linearly with
increase in temperature
1
0.5
1
3 5 10 30 50 100 300 5001000
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta (°C)
Collector Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R211-012.B
www.unisonic.com.tw
2SC2235
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R211-012.B
www.unisonic.com.tw
相关型号:
2SC2235-Y-T9N-B
Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN
UTC
2SC2235-Y-T9N-K
Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN
UTC
2SC2235G-O-T9N-K
Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN FREE, TO-92NL, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明