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2SC1815L-Y-T92-E-B

更新时间：2024-09-18 05:27:29

品牌：UTC

描述：AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

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2SC1815L-Y-T92-E-B 概述

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR 音频放大器高频率OSC NPN晶体管

2SC1815L-Y-T92-E-B 数据手册

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UNISONIC TECHNOLOGIES CO., LTD

2SC1815

NPN EPITAXIAL SILICON TRANSISTOR

AUDIO FREQUENCY

AMPLIFIER HIGH FREQUENCY

OSC NPN TRANSISTOR

ꢀ

FEATURES

* Collector-Emitter voltage:

BV_CEO=50V

* Collector current up to 150mA

* High h_FElinearity

* Complimentary to UTC 2SA1015

TO-92

*Pb-free plating product number: 2SC1815L

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

2SC1815-x-T92-A-B

2SC1815-x-T92-A-K

2SC1815L-x-T92-A-B

2SC1815L-x-T92-A-K

TO-92

Tape Box

Bulk

2SC1815L-x-T92-A-B

(1)Packing Type

(2)Pin Assignment

(3)Package Type

(4)Rank

(1) B: Tape Box, K: Bulk

(2) refer to Pin Assignment

(3) T92: TO-92

(4) x: refer to Classification of h

FE1

(5)Lead Plating

(5) L: Lead Free Plating, Blank: Pb/Sn

www.unisonic.com.tw

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QW-R201-006,D

2SC1815

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATING (Ta=25℃,unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

150

℃

Base current

I_B

Collector dissipation(Ta=25℃)

Junction Temperature

P_C

400

T_J

+125

℃

Storage Temperature

T_STG

-55 ~ +125

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITIONS

V_CB=60V, I_E=0

V_EB=5V, I_C=0

MIN

TYP

0.1

MAX

100

0.25

1.0

UNIT

Emitter Cut-off Current

I_EBO

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)I_C=100mA, I_B=10mA

V_BE(SAT)I_C=100mA, I_B=10mA

h_FE1

h_FE2

f_T

V_CE=6V, I_C=2mA

_CE=6V, I_C=150mA

120

700

DC Current Gain(note)

Current Gain Bandwidth Product

Output Capacitance

V_CE=10V, I_C=50mA

V_CB=10V, I_E=0, f=1MHz

I_C=-0.1mA, V_CE=6V

R_G=10kΩ, f=100Hz

MHz

C_ob

2.0

1.0

3.0

1.0

Noise Figure

CLASSIFICATION OF h_FE1

ꢀ

RANK

200-400

RANGE

120-240

350-700

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R201-006,D

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2SC1815

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Fig.1 Static characteristics

Fig.2 DC current Gain

10³

100

V_CE=6V

10²

I_B=300µA

I_B=250µA

I_B=200µA

I_B=150µA

10¹

10⁰

I_B=100µA

I_B=50µA

10^-1

10⁰

10¹

10²

10³

Collector-Emitter Voltage (V)

CollectorCurrent, I_C(mA)

Fig.4 Saturation Voltage

Fig.3 Base-Emitter on Voltage

10⁴

10²

10¹

I_C=10*I_B

V_CE=6V

V_{BE(SAT )}

10³

10²

10¹

10⁰

V_CE(SAT)

10^-1

10⁰

10¹

10²

10³

0.2

0.4

0.6

0.8 1.0

CollectorCurrent, I_C(mA)

Base-Emitter Voltage (V)

Fig.5 Current Gain-Bandwidth

Product

Fig.6 Collector Output Capacitance

10³

10²

f=1MHz

I_E=0

V_CE=6V

10¹

10⁰

10^-1

10⁰

10¹

10²

10⁰

10¹

10²

10³

CollectorCurrent, I_C(mA)

Collector-Base Voltage (V)

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

QW-R201-006,D

www.unisonic.com.tw

2SC1815

NPN EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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