2SC1815-GR-T92-B [UTC]
Small Signal Bipolar Transistor, 0.15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN;型号: | 2SC1815-GR-T92-B |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 0.15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN 放大器 晶体管 |
文件: | 总4页 (文件大小:209K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC1815
NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH
FREQUENCY OSC NPN
TRANSISTOR
FEATURES
* Collector-Emitter voltage:
BVCEO=50V
* Collector current up to 150mA
* High hFE linearity
* Complimentary to UTC 2SA1015
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
2SC1815-x-T92-B
2SC1815-x-T92-K
Lead Free
2SC1815L-x-T92-B
Halogen Free
1
E
E
2
C
C
3
B
B
2SC1815G-x-T92-B
TO-92
TO-92
Tape Box
Bulk
2SC1815L-x-T92-K 2SC1815G-x-T92-K
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R201-006,F
2SC1815
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃,unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-emitter voltage
Emitter-Base Voltage
Collector Current
60
50
V
5
V
150
50
mA
mA
mW
Base Current
IB
Power Dissipation(Ta=25℃)
Junction Temperature
Storage Temperature
PD
400
TJ
+125
℃
℃
TSTG
-55 ~ +125
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITIONS
VCB=60V, IE=0
VEB=5V, IC=0
MIN
TYP
0.1
MAX
100
100
0.25
1.0
UNIT
nA
nA
V
Emitter Cut-off Current
IEBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=100mA, IB=10mA
V
hFE1
hFE2
fT
VCE=6V, IC=2mA
CE=6V, IC=150mA
120
25
700
DC Current Gain
V
Current Gain Bandwidth Product
Output Capacitance
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
IC=-0.1mA, VCE=6V
RG=10kΩ, f=100Hz
80
MHz
pF
Cob
2.0
1.0
3.0
10
Noise Figure
NF
dB
CLASSIFICATION OF hFE1
RANK
Y
GR
200-400
BL
RANGE
120-240
350-700
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-006,F
www.unisonic.com.tw
2SC1815
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R201-006,F
2SC1815
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-006,F
www.unisonic.com.tw
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