2SB834GR(TO-126) [UTC]
Transistor;
| 型号： | 2SB834GR(TO-126) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SB834
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
Low frequency power amplifier applications.
1
TO-126
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation (Tc=25°C)
Collector current
Junction Temperature
Storage Temperature
Base Current
SYMBOL
VCBO
VCEO
VEBO
Pc
Ic
Tj
TSTG
IB
RATING
UNIT
V
V
V
W
A
°C
°C
A
60
60
7
25
3
150
-55 ~ +150
0.5
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-emitter breakdown voltage
Collector cut-off current
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
Ic=50mA
MIN TYP MAX UNIT
60
V
µA
µA
V
VCB=60V
VEB=7V
100
100
1
1
300
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
Collector-emitter on voltage
DC current gain
VCE(SAT)
VCE(ON)
hFE1
IC=3A,IB=0.3A
VCE=5V,IC=0.5A
IC=0.5A,VCE=5V
IC=3A,VCE=5V
VCE=5V,IC=0.5A
0.7
9
V
60
20
hFE2
Current gain bandwidth product
fT
MHZ
CLASSIFICATION of hFE1
RANK
O
Y
GR
150-300
RANGE
60-120
100-200
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-018,B
UTC2SB834
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Ic-Vce
3.0
2.0
POWER DERATING
40
80
60
50
70
40
30
35
30
25
20
15
10
5
20
IB = 10mA
1.0
0
0
75
125
150
0
100
25
50
TC = 25℃
TEMPERATURE, TC (℃)
1.0
2.0
3.0
4.0
5.0
6.0
COLLECTOR-EMITTER VOLTAGE, VCE (V)
DC CURRENT GAIN
Ic-Vbe
3.0
2.0
1.0
VCE = 5.0V
300
TC = 100℃
25
-25
VCE = 5.0V
100
-25
25
TC = 100℃
50
30
10
0
0.4
0.8
1.2
1.6
5
2
10
20
50 100 200
500
1k
3k
BASE-EMITTER VOLTAGE, VBE (V)
COLLECTOR CURRENT, IC (mA)
ACTIVE-REGION SAFE OPERATING AREA (SOA)
100ms
VCE(sat)-IC
1.0
0.5
10
COMMON EMITTER
IC/IB = 10
10ms
5.0
1ms
dc
2.0
1.0
0.5
0.2
TC = 100℃
0.1
Bonding Wire Limit
Second Breakdown Limit
Thermally Limited
at TC = 25℃(Single Pulse)
25℃
0.05
-25℃
0.2
0.1
0.02
2
5
10
20
50 100 200
500 1k
2k
3k
1.0
50 70 100
COLLECTOR EMITTER VOLTAGE, VCE (VOLTS)
10
20
2.0
5.0 7.0
COLLECTOR CURRENT, IC (mA)
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-018,B
UTC2SB834
PNP EPITAXIAL SILICON TRANSISTOR
3
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-018,B
UTC2SB834
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-018,B
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