2SB776-P-T60-K [UTC]
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN;
| 型号： | 2SB776-P-T60-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB776
PNP PLANAR TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB776 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High Current Output Up to 3A
* Low Saturation Voltage
* Complement to 2SD886
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
2SB776L-x-T60-K
2SB776L-x-TN3-R
Halogen Free
2SB776G-x-T60-K
2SB776G-x-TN3-R
1
E
B
2
C
C
3
B
E
2SB776-x-T60-K
2SB776-x-TN3-R
TO-126
TO-252
Bulk
Tape Reel
www.unisonic.com.tw
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R204-003.C
2SB776
PNP PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
VCEO
-50
V
VEBO
-5
V
DC
-3
-7
A
Collector Current
IC
IB
PULSE
A
Base Current
-0.6
A
TO-126
TO-252
10
W
W
°C
°C
Collector Dissipation (TC=25°C)
PC
25
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=-50V, IE=0
MIN TYP MAX UNIT
-1000 nA
Collector Cut-Off Current
Emitter Cut-Off Current
IEBO
VEB=-3V, Ic=0
-1000 nA
hFE1
VCE=-2V, Ic=-20mA
100
100
200
150
-0.3
-1.0
80
DC Current Gain (Note)
hFE2
400
-0.5
-2.0
VCE=-2V, Ic=-1A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) Ic=-2A, IB=-0.2A
VBE(SAT) Ic=-2A, IB=-0.2A
V
V
fT
VCE=-5V, Ic=-0.1A
MHz
pF
Cob
VCB=-10V, IE=0, f=1MHz
45
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100-200
160-320
200-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R204-003.C
www.unisonic.com.tw
2SB776
PNP PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS
Derating Curve of Safe
Operating Areas
Static Characteristics
150
100
1.6
-IB=9mA
-IB=8MA
-IB=7mA
1.2
0.8
-IB=6mA
-IB=5mA
-IB=4mA
50
-IB=3mA
-IB=2mA
-IB=1mA
0.4
0
0
0
4
8
12
16
20
-50
0
50
100
150
200
-Collector-Emitter Voltage (V)
Case Temperature, Tc (°C)
UNISONIC TECHNOLOGIE, LTD
3 of 4
QW-R204-003.C
www.unisonic.com.tw
2SB776
PNP PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R204-003.C
www.unisonic.com.tw
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