2SB772E-TM3-R [UTC]
Transistor;型号: | 2SB772E-TM3-R |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总3页 (文件大小:99K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
2SB772
PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
ꢀ DESCRIPTION
The UTC 2SB772 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and
voltage regulator.
1
ꢀ FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to UTC 2SD882
TO-251
*Pb-free plating product number:2SB772L
ꢀ PIN CONFIGURATION
PIN NO.
PIN NAME
BASE
1
2
3
COLLECTOR
EMITTER
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Tape Reel
Normal
Lead free
2SB772-TM3-R 2SB772L-TM3-R
TO-251
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R213-016,A
2SB772
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
RATINGS
UNIT
V
-40
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation( Tc=25℃)
Collector Dissipation( Ta=25℃)
-30
V
-5
V
10
W
W
Pc
1
Collector Current(DC)
Collector Current(PULSE)
Base Current
Ic
-3
-7
A
A
Ic
IB
-0.6
A
℃
Junction Temperature
Storage Temperature
TJ
TSTG
150
-40 ~ +150
℃
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
ICBO
TEST CONDITIONS
VCB=-30V, IE=0
MIN
TYP
MAX UNIT
-1000
-1000
nA
nA
IEBO
VEB=-3V, Ic=0
hFE1
hFE2
VCE=-2V, Ic=-20mA
30
100
200
150
-0.3
-1.0
80
DC Current Gain(Note 1)
VCE=-2V, Ic=-1A
400
-0.5
-2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat)
VBE(sat)
fT
Ic=-2A, IB=-0.2A
V
V
Ic=-2A, IB=-0.2A
VCE=-5V, Ic=-0.1A
VCB=-10V, IE=0, f=1MHz
MHz
pF
Cob
45
Note 1: Pulse test:PW<300µs, Duty Cycle<2%
ꢀ
CLASSIFICATION OF hFE 2
RANK
Q
P
E
RANGE
100 ~ 200
160 ~ 320
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R213-016,A
2SB772
PNP EPITAXIAL SILICON TRANSISTOR
■ TYPICAL CHARACTERICS
Fig.2 Derating curve of safe
operating areas
Fig.1 Static characteristics
Fig.3 Power Derating
150
100
12
8
1.6
-IB=9mA
-IB=8MA
-IB=7mA
1.2
-IB=6mA
S
/
b
l
i
m
-IB=5mA
i
t
e
d
0.8
-IB=4mA
50
4
0
-IB=3mA
0.4
-IB=2mA
-IB=1mA
0
0
0
4
8
12
16
20
-50
0
50
100
150
200
-50
0
50
100
150
200
-Collector-Emitter voltage(V)
Tc,Case Temperature(°C)
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
Fig.5 Current gain-
bandwidth product
Fig.6 Safe operating area
3
3
1
Ic(max),Pulse
Ic(max),DC
10
10
10
VCE=5V
I
E
=0
f=1MHz
2
2
0
10
10
10
I
B
=8mA
1
1
-1
10
10
10
0
0
-2
10
10
10
0
-1
10
-2
10
-3
10
-2
10
-1
10
0
1
0
1
2
10
10
10
10
10
10
Collector-Emitter Voltage
Ic,Collector current(A)
-Collector-Base Voltage(v)
Fig.7 DC current gain
Fig.8 Saturation Voltage
3
4
10
10
VCE=-2V
VBE(sat)
3
10
2
10
2
10
VCE(sat)
1
10
1
10
0
0
10
10
0
10
1
2
3
4
0
1
2
3
4
10
10
10
10
10
10
10
10
10
-Ic,Collector current(mA)
-Ic,Collector current(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R213-016,A
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