2SB1260L-P-AB3-F-R [UTC]

Transistor;
2SB1260L-P-AB3-F-R
型号: 2SB1260L-P-AB3-F-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Transistor

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UNISONIC TECHNOLOGIES CO., LTD  
2SB1260  
PNP EPITAXIAL SILICON TRANSISTOR  
POWER TRANSISTOR  
1
DESCRIPTION  
The UTC 2SB1260 is a epitaxial planar type PNP silicon  
transistor.  
SOT-89  
TO-252  
FEATURES  
*High breakdown voltage and high current.  
BVCEO= -80V, IC= -1A  
*Good hFE linearity.  
1
*Low VCE(SAT)  
*Pb-free plating product number: 2SB1260L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
B
B
B
2
C
C
C
3
E
E
E
2SB1260-x-AB3-F-R  
2SB1260-x-TN3-F-R  
2SB1260-x-TN3-F-T  
2SB1260L-x-AB3-F-R  
2SB1260L-x-TN3-F-R  
2SB1260L-x-TN3-F-T  
SOT-89  
TO-252  
TO-252  
Tape Reel  
Tape Reel  
Tube  
2SB1260L-x-AB3-F-R  
(1)Packing Type  
(2)Pin Assignment  
(3)Package Type  
(1) B: Tape Box, K: Bulk, R: Tape Reel  
(2) refer to Pin Assignment  
(3) AB3: SOT-89, TN3: TO-252  
(4) refer to Classification of hFE  
(5) L: Lead Free Plating, Blank: Pb/Sn  
(4)Rank  
(5)Lead Plating  
www.unisonic.com.tw  
1 of 4  
Copyright © 2005 Unisonic Technologies Co., Ltd  
QW-R208-017,C  
2SB1260  
PNP EPITAXIAL SILICON TRANSISTOR  
ABSOLUATE MAXIUM RATINGS (Ta = 25)  
PARAMETER  
Collector -Base Voltage  
SYMBOL  
VCBO  
RATINGS  
UNIT  
-80  
-80  
-5  
V
V
V
A
Collector -Emitter Voltage  
VCEO  
Emitter -Base Voltage  
VEBO  
Peak Collector Current (single pulse, Pw=100ms)  
DC Collector Current  
ICM  
-2  
IC  
-1  
A
SOT-89  
0.5  
1.9  
W
Power Dissipation  
TO-252  
PD  
W
Operating Temperature  
Storage Temperature  
TJ  
+150  
TSTG  
-40 ~ +150  
Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger.  
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCBO  
TEST CONDITIONS  
IC= -50μA  
MIN  
-80  
-80  
-5  
TYP MAX UNIT  
Collector Base Breakdown Voltage  
Collector Emitter Breakdown Voltage  
Emitter Base Breakdown Voltage  
Collector Cut-Off Current  
V
V
V
BVCEO IC= -1mA  
IE= -50μA  
BVEBO  
ICBO  
IEBO  
μA  
μA  
VCB=-60V  
-1  
-1  
Emitter Cut-Off Current  
VEB=-4V  
DC Current Gain(Note 1)  
hFE  
VCE=-3V, IOUT=-0.1A  
82  
390  
-0.4  
Collector-Emitter Saturation Voltage  
Transition Frequency  
VCE(SAT) IC=-500mA, IB=-50mA  
V
fT  
VCE= -5V, IE=50mA, f=30MHz  
VCB=-10V, IE=0, f=1MHz  
100  
25  
MHz  
pF  
Output Capacitance  
Cob  
Note 1: Pulse test: PW<300µs, Duty Cycle<2%  
CLASSIFICATION OF hFE  
RANK  
P
Q
120 ~ 270  
R
RANGE  
82 ~ 180  
180 ~ 390  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
www.unisonic.com.tw  
QW-R208-017,C  
2SB1260  
PNP EPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERICS  
Grounded Emitter Propagation  
Characteristics  
Grounded Emitter Output  
Characteristics  
-1000  
VCE = -5V  
Ta=25  
-1.0  
-0.45mA  
Ta=25℃  
-0.4mA  
-100  
-10  
-1  
-0.8  
-0.35mA  
-0.3mA  
-0.6  
-0.25mA  
-0.2mA  
-0.4  
-0.15mA  
-0.1mA  
-0.05mA  
-0.2  
IB =0mA  
-0.1  
0
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6  
Base to Emitter Voltage, VBE(V)  
-0.2-0.4-0.6 -0.8-1.0-1.2 -1.4 -1.6-1.8-2.0  
Collector to Emitter Voltage, VCE(V)  
DC Current Gain vs. Collector  
Current  
Collector-emitter Saturation Voltage  
vs. Collector Current  
1000  
500  
Ta=25℃  
Ta=25℃  
-2  
-1  
200  
100  
-0.5  
VcE= -3V  
-0.2  
-0.1  
Ic/IB=20  
VcE= -1V  
50  
-0.05  
10  
20  
10  
-0.02  
-0.01  
-100-200-500  
Collector Current, Ic(mA)  
-2000  
-1 -2 -5 -10 -20 -50 -1000  
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000  
Collector Current, Ic(mA)  
Gain Bandwidth Product vs. Emitter  
Current  
Collector Output Capacitance vs.  
Collector-Base Voltage  
1000  
500  
1000  
Ta=25℃  
f=1MHz  
Ta=25℃  
500  
VCE = -5V  
IE=0A  
200  
100  
200  
100  
50  
50  
20  
10  
20  
10  
5
5
2
1
2
1
-0.1 -0.2 -0.5-1 -2  
-5 -10 -20 -50 -100  
1
2
5 10 20 50 100200 5001000  
Emitter Current, I (mA)  
E
Collector to Base Voltage, VCB(V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
www.unisonic.com.tw  
QW-R208-017,C  
2SB1260  
PNP EPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERICS(Cont.)  
Emitter Input Capacitance vs. Emitter-  
Base Voltage  
Safe Operating Area  
1000  
500  
-2  
Ta=25℃  
f=1MHz  
P
-1  
W
=
Ic=0A  
1
0
m
P
s
-0.5  
W
=
200  
100  
50  
1
0
0
m
s
-0.2  
-0.1  
D
C
-0.05  
20  
Ta=25℃  
*Single pulse  
-0.1  
-0.2  
-0.5 -1  
-2  
-5 -10  
-0.5  
-1 -2  
-5 -10 -20 -50 -100  
Emitter To Base Voltage, VEB(V)  
Collector to Emitter Voltage, VCE(V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
www.unisonic.com.tw  
QW-R208-017,C  

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