2SB1260L-P-AB3-F-R [UTC]
Transistor;
| 型号： | 2SB1260L-P-AB3-F-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB1260
PNP EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
1
ꢀ
DESCRIPTION
The UTC 2SB1260 is a epitaxial planar type PNP silicon
transistor.
SOT-89
TO-252
ꢀ FEATURES
*High breakdown voltage and high current.
BVCEO= -80V, IC= -1A
*Good hFE linearity.
1
*Low VCE(SAT)
*Pb-free plating product number: 2SB1260L
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
B
B
B
2
C
C
C
3
E
E
E
2SB1260-x-AB3-F-R
2SB1260-x-TN3-F-R
2SB1260-x-TN3-F-T
2SB1260L-x-AB3-F-R
2SB1260L-x-TN3-F-R
2SB1260L-x-TN3-F-T
SOT-89
TO-252
TO-252
Tape Reel
Tape Reel
Tube
2SB1260L-x-AB3-F-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) refer to Pin Assignment
(3) AB3: SOT-89, TN3: TO-252
(4) refer to Classification of hFE
(5) L: Lead Free Plating, Blank: Pb/Sn
(4)Rank
(5)Lead Plating
www.unisonic.com.tw
1 of 4
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R208-017,C
2SB1260
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector -Base Voltage
SYMBOL
VCBO
RATINGS
UNIT
-80
-80
-5
V
V
V
A
Collector -Emitter Voltage
VCEO
Emitter -Base Voltage
VEBO
Peak Collector Current (single pulse, Pw=100ms)
DC Collector Current
ICM
-2
IC
-1
A
SOT-89
0.5
1.9
W
Power Dissipation
TO-252
PD
W
℃
℃
Operating Temperature
Storage Temperature
TJ
+150
TSTG
-40 ~ +150
Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
TEST CONDITIONS
IC= -50μA
MIN
-80
-80
-5
TYP MAX UNIT
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
V
V
V
BVCEO IC= -1mA
IE= -50μA
BVEBO
ICBO
IEBO
μA
μA
VCB=-60V
-1
-1
Emitter Cut-Off Current
VEB=-4V
DC Current Gain(Note 1)
hFE
VCE=-3V, IOUT=-0.1A
82
390
-0.4
Collector-Emitter Saturation Voltage
Transition Frequency
VCE(SAT) IC=-500mA, IB=-50mA
V
fT
VCE= -5V, IE=50mA, f=30MHz
VCB=-10V, IE=0, f=1MHz
100
25
MHz
pF
Output Capacitance
Cob
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
ꢀ
CLASSIFICATION OF hFE
RANK
P
Q
120 ~ 270
R
RANGE
82 ~ 180
180 ~ 390
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R208-017,C
2SB1260
PNP EPITAXIAL SILICON TRANSISTOR
■
TYPICAL CHARACTERICS
Grounded Emitter Propagation
Characteristics
Grounded Emitter Output
Characteristics
-1000
VCE = -5V
Ta=25℃
-1.0
-0.45mA
Ta=25℃
-0.4mA
-100
-10
-1
-0.8
-0.35mA
-0.3mA
-0.6
-0.25mA
-0.2mA
-0.4
-0.15mA
-0.1mA
-0.05mA
-0.2
IB =0mA
-0.1
0
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Base to Emitter Voltage, VBE(V)
-0.2-0.4-0.6 -0.8-1.0-1.2 -1.4 -1.6-1.8-2.0
Collector to Emitter Voltage, VCE(V)
DC Current Gain vs. Collector
Current
Collector-emitter Saturation Voltage
vs. Collector Current
1000
500
Ta=25℃
Ta=25℃
-2
-1
200
100
-0.5
VcE= -3V
-0.2
-0.1
Ic/IB=20
VcE= -1V
50
-0.05
10
20
10
-0.02
-0.01
-100-200-500
Collector Current, Ic(mA)
-2000
-1 -2 -5 -10 -20 -50 -1000
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
Gain Bandwidth Product vs. Emitter
Current
Collector Output Capacitance vs.
Collector-Base Voltage
1000
500
1000
Ta=25℃
f=1MHz
Ta=25℃
500
VCE = -5V
IE=0A
200
100
200
100
50
50
20
10
20
10
5
5
2
1
2
1
-0.1 -0.2 -0.5-1 -2
-5 -10 -20 -50 -100
1
2
5 10 20 50 100200 5001000
Emitter Current, I (mA)
E
Collector to Base Voltage, VCB(V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R208-017,C
2SB1260
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERICS(Cont.)
Emitter Input Capacitance vs. Emitter-
Base Voltage
Safe Operating Area
1000
500
-2
Ta=25℃
f=1MHz
P
-1
W
=
Ic=0A
1
0
m
P
s
-0.5
W
=
200
100
50
1
0
0
m
s
-0.2
-0.1
D
C
-0.05
20
Ta=25℃
*Single pulse
-0.1
-0.2
-0.5 -1
-2
-5 -10
-0.5
-1 -2
-5 -10 -20 -50 -100
Emitter To Base Voltage, VEB(V)
Collector to Emitter Voltage, VCE(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW-R208-017,C
相关型号：
©2020 ICPDF网 联系我们和版权申明