2SB1198 [UTC]

LOW FREQUENCY PNP TRANSISTOR; 低频PNP晶体管
2SB1198
型号: 2SB1198
厂家: Unisonic Technologies    Unisonic Technologies
描述:

LOW FREQUENCY PNP TRANSISTOR
低频PNP晶体管

晶体 晶体管
文件: 总3页 (文件大小:119K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UTC2SB1198  
PNPEPITAXIAL SILICON TRANSISTOR  
LOW FREQUENCY PNP  
TRANSISTOR  
DESCRIPTION  
The UTC 2SB1198 is an epitaxial planar type PNP silicon  
transistor.  
2
1
FEATURES  
*High breakdown voltage : BVCEO= -80V  
*Low VCE(sat) : VCE(sat)= -0.2V (Typ)  
(Ic/IB = -0.5A/-50mA)  
3
SOT-23  
1:EMITTER  
2:BASE 3: COLLECTOR  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
LIMITS  
-80  
-80  
-5  
-0.5  
UNIT  
V
V
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
Pc  
Tj  
TSTG  
0.2  
150  
-55 ~ +150  
W
°C  
°C  
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)  
PARAMETER  
Collector Base Breakdown Voltage  
Collector Emitter Breakdown Voltage  
Emitter Base Breakdown Voltage  
Collector Cut-Off Current  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic= -50μA  
MIN TYP MAX UNIT  
-80  
-80  
-5  
V
V
V
μA  
μA  
V
Ic= -2mA  
IE= -50μA  
VCB= -50V  
VEB= -4V  
VCE(sat) Ic/IB= -0.5A/-50mA  
-0.5  
-0.5  
-0.5  
390  
Emitter Cut-Off Current  
IEBO  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
Transition Frequency  
-0.2  
hFE  
fT  
Cob  
VCE= -3V,Ic= -0.1A  
VCE=-10V,IE= 50 mA, f=100MHz  
VCB= -10V, IE= 0 A, f=1MHz  
120  
180  
11  
MHz  
pF  
Output Capacitance  
CLASSIFICATION OF hFE  
RANK  
RANGE  
Q
R
120-270  
AKQ  
180-390  
AKR  
MARKING  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-040,A  
UTC2SB1198  
PNPEPITAXIAL SILICON TRANSISTOR  
ELECTRICAL CHARACTERISTICS CURVES  
Figure1.GroundedEmitter  
PropagationCharacteristics  
-10  
Figure2.GroundedEmitter  
OutputCharacteristics  
-0.5  
-0.4  
Ta=25  
-5.0mA  
VCE= -3V  
-5  
-45mA  
-40mA  
-35mA  
-30mA  
-25mA  
-20mA  
-2  
Ta=100℃  
-1  
-500m  
Ta=25℃  
-0.3  
-0.2  
-200m  
-1.5mA  
-100m  
Ta=-25℃  
-1.0mA  
-0.5mA  
-50m  
-20m  
-10m  
-5m  
-0.1  
0
-2m  
-1m  
IB =0mA  
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4  
BasetoEmitterVoltage:V BE (V)  
-0.4  
-0.8  
-1.2  
-1.6  
-2.0  
Collector toEmitterVoltage:V CE(V)  
Figure4.Collector-emitterSaturation  
Voltage vs.CollectorCurrent (I)  
Figure3.DC CurrentGain  
vs.Collector Current  
-2  
1000  
500  
Ta=25℃  
VCE= -3V  
-1  
-500m  
Ta=100℃  
Ta=25℃  
Ta=-25℃  
200  
-200m  
100  
50  
Ic/IB=50  
20  
-100m  
-50m  
10  
20  
10  
-20m  
-10m  
-1  
-10  
-100  
-1A  
-10m  
Collector Current: Ic(A)  
-1m  
-100m  
-1  
Collector Current: Ic(mA)  
Figure6.Collector-emitterSaturation  
Voltagevs.Collector Current(III)  
Figure5.Collector-emitterSaturation  
Voltage vs.CollectorCurrent (II)  
-2  
-2  
Ic/IB=20  
Ic/IB=10  
-1  
-1  
-500m  
-500m  
-200m  
Ta=100℃  
Ta=25℃  
Ta=-25℃  
-200m  
Ta=100℃  
-100m  
-50m  
-100m  
-50m  
Ta=25℃  
Ta=-25℃  
-20m  
-10m  
-20m  
-10m  
-10  
Collector Current: Ic(mA)  
-1  
-10  
-100  
-1  
-100  
-1A  
-1A  
Collector Current: Ic(mA)  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-040,A  
UTC2SB1198  
PNPEPITAXIAL SILICON TRANSISTOR  
Figure 7.Collector-emitter Saturation  
Voltage vs.Collector Current (IV)  
Figure 8. Gain Bandwidth Product  
vs.Emitter Current  
-10  
-5  
1000  
500  
Ta= 25  
VCE= -10V  
Ic/IB=50  
-2  
200  
-1  
-500m  
Ta=100℃  
Ta= 25℃  
100  
50  
-200m  
Ta= -25℃  
-100m  
-50m  
20  
10  
-20m  
-10m  
1m  
10m  
100m  
1
-100  
-1  
-1A  
-10  
Collector Current : Ic(mA)  
Emitter Current : IE (mA)  
Figure9.Collector Output Capacitance  
vs.Collector-Base Voltage  
Emitter Input Capacitance  
vs.Emitter-Base Voltage  
1000  
500  
Ta=25℃  
f =1MHz  
IE=0A  
Ic=0A  
200  
100  
50  
20  
10  
5
2
1
-100  
-1  
-0.1  
-10  
Collector to Base Voltage:VCB (V)  
Emitter to Base Voltage:VEB (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
3
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-040,A  

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