2SB1188L-X-AB3-R [UTC]
MEDIUM POWER LOW VOLTAGE TRANSISTOR; 中功率低电压晶体管
| 型号： | 2SB1188L-X-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 文件： | 总4页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB1188
PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB1188 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
1
FEATURES
*High current output up to 3A
*Low saturation voltage
SOT-89
Lead-free:
2SB1188L
Halogen-free: 2SB1188G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-89
Packing
Normal
Lead Free Plating
Halogen Free
1
2
3
2SB1188-x-AB3-R
2SB1188L-x-AB3-R 2SB1188G-x-AB3-R
B
C
E
Tape Reel
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R208-041.B
2SB1188
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
RATINGS
-40
UNIT
Collector -Base Voltage
V
V
Collector -Emitter Voltage
Emitter -Base Voltage
Peak Collector Current
DC Collector Current
Base Current
-30
-5
V
-7
A
IC
-3
A
IB
-0.6
A
Power Dissipation
PD
0.5
W
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
-40~+150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
-40
-30
-5
TYP
MAX
UNIT
V
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC= -50μA
BVCEO IC= -1mA
BVEBO IE=-50μA
V
V
ICBO
IEBO
hFE1
hFE2
VCB=-30V,IE=0
-1
-1
μA
μA
Emitter Cut-Off Current
VEB=-4V,IC=0
VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A
30
200
150
-0.3
-1.0
80
DC Current Gain(Note)
100
400
-0.5
-2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) Ic=-2A,IB=-0.2A
VBE(SAT) Ic=-2A,IB=-0.2A
V
V
fT
VCE=-5V,Ic=-0.1A
MHz
pF
Cob
VCB=-10V,IE=0,f=1MHz
45
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100 ~ 200
160 ~ 320
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-041.B
www.unisonic.com.tw
2SB1188
PNP SILICON TRANSISTOR
■
TYPICAL CHARACTERICS
Static Characteristics
Derating Curve of Safe Operating Areas
150
100
1.6
-IB=9mA
-IB=8mA
-IB=7mA
1.2
0.8
-IB=6mA
-IB=5mA
-IB=4mA
50
0
-IB=3mA
-IB=2mA
0.4
0
-IB=1mA
100
200
-50
0
50
150
0
4
8
12
16
20
-Collector-Emitter Voltage (V)
Case Temperature, Tc (°C)
Power Derating
Collector Output Capacitance
3
2
1
10
10
10
IE=0
f=1MHz
12
8
4
0
0
10
0
-1
-2
-3
-50
0
50
100
150
200
10
10
10
10
Case Temperature, Tc (°C)
-Collector-Base Voltage(V)
Current Gain-Bandwidth Product
Safe Operating Area
3
1
0
Ic(max),Pulse
Ic(max),DC
10 VCE=5V
10
10
2
10
IIB==88mmAA
B
1
-1
10
10
10
0
10
-2
-2
-1
10
0
1
0
1
2
10
10
Collector Current, Ic (A)
10
10
10
Collector-Emitter Voltage
10
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-041.B
www.unisonic.com.tw
2SB1188
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS(cont.)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-041.B
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