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2SB1182 [UTC]

MEDIUM POWER LOW VOLTAGE TRANSISTOR; 中功率低电压晶体管
2SB1182
型号： 2SB1182
厂家： Unisonic Technologies    Unisonic Technologies
描述：

MEDIUM POWER LOW VOLTAGE TRANSISTOR
中功率低电压晶体管

晶体 晶体管
文件： 总4页 (文件大小：166K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
2SB1182  
PNP SILICON TRANSISTOR  
MEDIUM POWER LOW  
VOLTAGE TRANSISTOR  
1
TO-252  
„
DESCRIPTION  
The UTC 2SB1182 is a medium power low voltage transistor,  
designed for audio power amplifier, DC-DC converter and voltage  
regulator.  
„ FEATURES  
* High current output up to 3A  
* Low saturation voltage  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
B
B
2
C
C
3
E
E
2SB1182L-x-TN3-R  
2SB1182L-x-TN3-T  
2SB1182G-x-TN3-R  
2SB1182G-x-TN3-T  
TO-252  
TO-252  
Tape Reel  
Tube  
www.unisonic.com.tw  
1 of 4  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R209-027.A  
2SB1182  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-40  
-32  
-5  
V
V
DC  
-2  
A
Collector Current  
Pulse  
ICP  
-3  
A
Base Current  
IB  
-0.6  
10  
A
(
℃)  
Collector Dissipation TA=25  
PC  
W
℃
℃
Junction Temperature  
Storage Temperature  
TJ  
+150  
TSTG  
-55 ~ +150  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
-40  
-32  
-5  
TYP  
MAX  
UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
BVCBO IC=-50μA  
BVCEO IC=-1mA  
BVEBO IE=-50μA  
V
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB=-20V  
-1  
-1  
μA  
μA  
μA  
Collector Cut-Off Current  
VCE=-20V  
Emitter Cut-Off Current  
VEB=-4V  
-1  
DC Current Gain(Note 1)  
VCE=-3V, IC=-0.5A  
120  
390  
-0.8  
-2.0  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE(SAT) IC=-2A, IB=-0.2A  
VBE(SAT) IC=-2A, IB=-0.2A  
-0.5  
-1.0  
100  
50  
V
V
fT  
VCE=-5V, IE=0.5 A, ,f=100MHz  
MHz  
pF  
COB  
VCB=-10V, IE=0 A,f=1MHz  
Note 1: Pulse test: PW<300μs, Duty Cycle<2%  
„
CLASSIFICATION OF hFE2  
RANK  
Q
R
RANGE  
120 ~ 270  
180 ~ 390  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R209-027.A  
www.unisonic.com.tw  
2SB1182  
PNP SILICON TRANSISTOR  
■
TYPICAL CHARACTERICS  
Derating Curve of Safe Operating Areas  
Static Characteristics  
150  
100  
1.6  
-IB=9mA  
-IB=8mA  
-IB=7mA  
1.2  
0.8  
-IB=6mA  
-IB=5mA  
-IB=4mA  
50  
-IB=3mA  
-IB=2mA  
0.4  
0
-IB=1mA  
16 20  
0
0
4
8
12  
-50  
0
50  
100  
150  
200  
-Collector-Emitter voltage (V)  
Power Derating  
Case Temperature, Tc (℃)  
Collector Output Capacitance  
3
2
1
10  
10  
10  
12  
IE=0  
f=1MHz  
8
4
0
0
10  
0
-1  
-2  
-3  
-50  
0
50  
100  
150  
200  
10  
10  
10  
10  
Case Temperature, Tc (℃)  
-Collector-Base Voltage(v)  
Safe Operating Area  
Current Gain-  
Bandwidth Product  
3
2
1
1
Ic(max),Pulse  
Ic(max),DC  
10  
10  
10  
10  
VCE=5V  
IB=8mA  
0
10  
10  
-1  
0
-2  
10  
10  
-2  
-1  
0
1
0
1
2
10  
10  
10  
10  
10  
10  
10  
Collector-Emitter Voltage  
Collector Current, Ic (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R209-027.A  
www.unisonic.com.tw  
2SB1182  
PNP SILICON TRANSISTOR  
■
TYPICAL CHARACTERICS(Cont.)  
DC Current Gain  
Saturation Voltage  
3
4
10  
10  
VCE=-2V  
VBE(SAT)  
3
10  
2
10  
2
10  
VCE(SAT)  
1
10  
1
10  
0
0
10  
10  
0
1
2
3
4
0
1
2
3
4
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
-Collector Current, Ic (mA)  
-Collector Current, Ic (mA)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R209-027.A  
www.unisonic.com.tw  

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