2SB1132Q [UTC]

Transistor;
2SB1132Q
型号: 2SB1132Q
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Transistor

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UTC2SB1132  
PNPEPITAXIAL SILICON TRANSISTOR  
MEDIUM POWER TRANSISTOR  
DESCRIPTION  
The UTC 2SB1132 is a epitaxial planar type PNP silicon  
transistor.  
1
FEATURES  
*Low VCE(sat).VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA)  
SOT-89  
1:EMITTER 2:COLLECTOR 3:BASE  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
LIMITS  
UNIT  
V
V
V
A
-40  
-32  
-5  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
-1  
Collector Current (PULSE) (note 1)  
Collector Power Dissipation  
Collector Power Dissipation (note 2)  
Junction Temperature  
Ic  
Pc  
Pc  
Tj  
-2  
0.5  
2
A
W
W
°C  
°C  
150  
-55 ~ +150  
Storage Temperature  
TSTG  
Note 1: Single pulse, Pw=100ms  
Note 2: When mounted on a 40*40*0.7 mm ceramic board.  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector Base Breakdown Voltage  
Collector Emitter Breakdown Voltage  
Emitter Base Breakdown Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Ic= -50μA  
Ic= -1mA  
IE= -50μA  
-40  
-32  
-5  
V
V
V
μA  
μA  
V
VCB= -20V  
VEB= -4V  
-0.5  
-0.5  
-0.5  
390  
IEBO  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
Transition Frequency  
VCE(sat)  
hFE  
fT  
Cob  
Ic= -500mA,IB= -50mA (note)  
VCE= -3V,Ic= -0.1A (note)  
VCE= -5V, IE= 50 mA,f=30MHz  
VCB= -10V, IE= 0A,f=1MHz  
-0.2  
82  
150  
20  
MHz  
pF  
Output Capacitance  
30  
Note: Measured using pulse current.  
CLASSIFICATION OF hFE  
RANK  
P
Q
R
RANGE  
82-180  
120-270  
180-390  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-016,A  
UTC2SB1132  
PNPEPITAXIAL SILICON TRANSISTOR  
ELECTRICAL CHARACTERISTICS CURVES  
Figure 1.Grounded Emitter  
Propagation Characteristics  
-500  
Figure 2.Grounded Emitter  
Output Characteristics  
-500  
-400  
-300  
-4.0  
-2.5  
-3.0  
-3.5  
VCE =-6V  
-2.0  
-1.5  
-200  
-4.5  
-5.0  
Ta=100  
-100  
Ta=25℃  
-50  
Ta= -55℃  
-20  
-1.0  
-0.5  
-200  
-100  
-10  
-5  
-2  
-1  
Ta=25IB =0mA  
-1.2 -1.6 -2.0  
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6  
Base to Emitter Voltage:VBE(V)  
Figure 3.DC Current Gain  
-0.4  
-0.8  
0
Collector to Emitter Voltage:VCE(V)  
Figure 4.DC Current Gain  
vs.Collector Current ()  
vs.Collector Current (Ⅰ  
)
Ta=25℃  
VcE= -3V  
1000  
500  
1000  
500  
Ta=100℃  
Ta=25℃  
VcE= -3V  
VcE= -1V  
200  
200  
100  
50  
100  
50  
Ta= -55℃  
-1 -2  
-5 -10 -20 -50-100-200 -500-1000  
Collector Current :Ic(mA)  
-1 -2  
-5 -10 -20 -50-100-200 -500-1000  
Collector Current :Ic(mA)  
Figure 5.Collector-emitter Saturation  
Voltage vs.Collector Current  
Figure 6.Collector Emitter Saturation  
Voltage vs.Base Current  
-1.0  
-0.8  
-0.6  
-1  
Ta=25℃  
IC/IB=10  
Ta=25℃  
-0.5  
-0.2  
-0.1  
IC = -500mA  
-0.4  
-0.05  
-0.2  
0
-0.02  
-0.01  
IC = -300mA  
-2 -5 -10  
-1 -2  
-5 -10 -20 -50-100-200-500-1000-2000  
Collector Current :Ic(mA)  
-20  
Base Current :IB(mA)  
-50 -100  
-1  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-016,A  
UTC2SB1132  
PNPEPITAXIAL SILICON TRANSISTOR  
Figure 7.Gain Bandwidth Product  
vs. Emitter Current  
Figure 8. Collector Output Capacitance  
vs.Collector-base Voltage  
100  
50  
Ta=25° C  
VCE = -5V  
Ta=25° C  
f=1MHz  
IE=0A  
200  
100  
50  
20  
10  
20  
-2  
-5 -10  
-20  
-50 -100  
-1  
-2  
-5 -10  
-20  
-1  
-0.5  
Emitter Current :IB(mA)  
Collector to Base Voltage:VCB(V)  
Figure 10 .Transient Thermal  
Resistance  
Figure 9.Safe Operation Area  
-5  
1000  
100  
10  
Ta=25° C  
-2  
-1  
-0.5  
-0.2  
-0.1  
1
-0.05  
Ta=25° C  
-0.02  
-0.01  
*Single pulse  
0.1  
0.001 0.01 0.1  
1
10 100 1000  
0
-0.2 -0.5 -1 -2  
Collector to Emitter Voltage:VCE(V)  
-5 -10 -20  
-50  
Time:t(s)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
3
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-016,A  

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