2SB1132G-Q-TN3-R [UTC]
Small Signal Bipolar Transistor,;
| 型号： | 2SB1132G-Q-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总5页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB1132
PNP SILICON TRANSISTOR
MEDIUM POWER TRANSISTOR
DESCRIPTION
The UTC 2SB1132 is a epitaxial planar type PNP silicon
transistor.
FEATURES
* Low VCE(SAT)
.
VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
B
2
C
C
C
3
E
E
E
2SB1132L-x-AB3-R
2SB1132L-x-TN3-R
2SB1132L-x-TN3-T
2SB1132G-x-AB3-R
2SB1132G-x-TN3-R
2SB1132G-x-TN3-T
SOT-89
TO-252
TO-252
Tape Reel
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R208-016.C
2SB1132
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
-40
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
-32
V
VEBO
-5
V
Collector Current
Collector Current (Single pulse, Pw=100ms)
DC
-1
A
IC
PULSE
SOT-89
TO-252
-2
A
0.5
1
W
W
°C
°C
Collector Power Dissipation
PC
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC = -50μA
BVCEO IC = -1mA
BVEBO IE= -50μA
-40
-32
-5
V
V
V
ICBO
IEBO
VCB= -20V
VEB= -4V
-0.5
-0.5
-0.5
390
μA
μA
V
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
VCE(SAT) IC = -500mA,IB= -50mA (Note)
-0.2
hFE
fT
VCE= -3V,IC = -0.1A (Note)
VCE= -5V, IE= 50mA, f=30MHz
VCB= -10V, IE=0A, f=1MHz
82
Transition Frequency
150
20
MHz
pF
Output Capacitance
COB
30
Note: Measured using pulse current.
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
UNISONIC TECHNOLOGIES CO., LTD
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2SB1132
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
Grounded Emitter Output
Characteristics
-500
-500
-400
-300
-4.0
-2.5
-3.0
-3.5
VCE =-6V
-2.0
-200
-100
-50
-4.5
TA=100
-1.5
-5.0
TA=25
TA= -55
-20
-10
-5
-1.0
-0.5
-200
-100
-2
TA=25
-1.2
IB =0mA
-1.6 -2.0
-1
0
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Base to Emitter Voltage, VBE(V)
-0.4
-0.8
Collector to Emitter Voltage, VCE(V)
DC Current Gain vs.Collector Current (
VCE= -3V
)
DC Current Gain vs. Collector Current (
TA=25
)
1000
500
1000
500
200
TA=100
TA=25
VCE= -3V
VCE= -1V
200
100
50
100
50
TA= -55
-1 -2
-5 -10 -20 -50-100-200-500-1000
Collector Current :Ic(mA)
-1 -2
-5 -10 -20 -50-100-200-500-1000
Collector Current, Ic(mA)
Collector-emitter Saturation Voltage vs.
Collector Current
Collector Emitter Saturation Voltage vs.
Base Current
-1.0
-0.8
-0.6
-1
TA=25
TA=25
IC/IB=10
-0.5
-0.2
-0.1
IC = -500mA
-0.4
-0.05
-0.2
0
-0.02
-0.01
IC = -300mA
-1 -2
-5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
-2
-5 -10
-20
-50 -100
-1
Base Current, IB(mA)
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2SB1132
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Gain Bandwidth Product
vs. Emitter Current
Collector Output Capacitance
vs.Collector-Base Voltage
100
50
TA=25°C
VCE = -5V
TA=25°C
f=1MHz
IE=0A
200
100
50
20
10
20
-1
-2
-5 -10
-20
-50 -100
-1
-2
-5 -10
-20
-0.5
Emitter Current, IB(mA)
Collector to Base Voltage, VCB(V)
Transient Thermal Resistance
Safe Operation Area
-5
1000
100
10
TA=25°C
-2
-1
-0.5
-0.2
-0.1
1
-0.05
TA=25°C
*Single pulse
-0.02
-0.01
0.1
0.001 0.01
0.1
1
10 100 1000
0
-0.2 -0.5 -1 -2
-5 -10 -20
-50
Collector to Emitter Voltage, VCE(V)
Time, t(s)
Power Derating
1.6
1.4
1.2
1
TO-252
SOT-89
0.8
0.6
0.4
0.2
0.0
0
25 50 75 100 125 150 175
Ambient Temperature, TA (
)
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2SB1132
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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