2SB1132-P-TN3-R [UTC]
MEDIUM POWER TRANSISTOR; 中功率晶体管
| 型号： | 2SB1132-P-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | MEDIUM POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
SOT-89 Plastic-Encapsulated Transistors
SOT-89
2SB1132 TRANSISTOR (PNP)
1. BASE
FEATURES
Power dissipation
2. COLLECTOR
3. EMITTER
1
PCM:
0.5
-1
W (Tamb=25℃)
2
3
Collector current
ICM:
A
Collector-base voltage
V(BR)CBO -40
:
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
MIN
-40
-32
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
µA
µA
-0.5
-0.5
390
-0.5
IEBO
Emitter cut-off current
hFE(1)
DC current gain
VCE=-3V, IC=-100mA
82
VCE(sat)
V
Collector-emitter saturation voltage
Transition frequency
IC=-500mA, IB=-50mA
MHz
pF
fT
VCE=-5V, IC=-50mA, f=30MHz
150
20
Cob
30
Collector output capacitance
V
CB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
Range
82-180
120-270
BAQ
180-390
Marking
BAP
BAR
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