2SB1017_15 [UTC]
PNP SILICON EPITAXIAL TRANSISTOR;![2SB1017_15](http://pdffile.icpdf.com/pdf1/p00165/img/icpdf/2SB10_920705_icpdf.jpg)
型号: | 2SB1017_15 |
厂家: | ![]() |
描述: | PNP SILICON EPITAXIAL TRANSISTOR |
文件: | 总2页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB1017
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be
used in power amplifier applications.
FEATURES
* Low base drive
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220F
Packing
Tube
Lead Free
Halogen Free
1
2
3
2SB1017L-x-TF3-T
2SB1017G-x-TF3-T
B
C
E
2SB1017L-x-TF3-T
(1) T: Tube
(2) TF3: TO-220F
(1)Packing Type
(2)Package Type
(3) x: refer to Classification of hFE
(4) Halogen Free, L: Lead Free
(3)Rank
(4)Lead Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 2
QW-R219-010.a
2SB1017
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
-80
-80
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
-5
V
-4
A
Base Current
IB
-0.4
25
A
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
PC
W
°C
°C
TJ
150
TST
-55 ~ 150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise noted)
PARAMETER
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
IC=-50mA, IB=0
MIN TYP MAX
UNIT
V
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
-80
VCB=-80V, IE=0
-30
µA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-100
µA
hFE1
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-3A
IC=-3A, IB=-0.3A
VCE=-5V, IC =-3A
VCE=-5V, IC =-0.5A
VCB=-10V, f=1MHz
40
15
240
DC Current Gain
hFE2
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
VCE(sat)
VBE(on)
fT
-1
-1
-1.7
-1.5
V
V
Current Gain Bandwidth Product
Output Capacitance
9
MHz
pF
Cob
130
HFE CLASSIFICATION
Classification
hFE1
R
O
Y
40 ~ 80
70 ~ 140
120 ~ 240
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R219-010.a
www.unisonic.com.tw
相关型号:
![](http://pdffile.icpdf.com/pdf1/p00101/img/page/2SB1018A_544359_files/2SB1018A_544359_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00101/img/page/2SB1018A_544359_files/2SB1018A_544359_2.jpg)
2SB1018A-O
TRANSISTOR 7 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10R1A, 3 PIN, BIP General Purpose Power
TOSHIBA
![](http://pdffile.icpdf.com/pdf1/p00101/img/page/2SB1018A_544359_files/2SB1018A_544359_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00101/img/page/2SB1018A_544359_files/2SB1018A_544359_2.jpg)
2SB1018A-Y
TRANSISTOR 7 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10R1A, 3 PIN, BIP General Purpose Power
TOSHIBA
©2020 ICPDF网 联系我们和版权申明