2SB1017_15 [UTC]

PNP SILICON EPITAXIAL TRANSISTOR;
2SB1017_15
型号: 2SB1017_15
厂家: Unisonic Technologies    Unisonic Technologies
描述:

PNP SILICON EPITAXIAL TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD  
2SB1017  
Preliminary  
PNP EPITAXIAL SILICON TRANSISTOR  
PNP SILICON EPITAXIAL  
TRANSISTOR  
„
DESCRIPTION  
The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be  
used in power amplifier applications.  
„
FEATURES  
* Low base drive  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-220F  
Packing  
Tube  
Lead Free  
Halogen Free  
1
2
3
2SB1017L-x-TF3-T  
2SB1017G-x-TF3-T  
B
C
E
2SB1017L-x-TF3-T  
(1) T: Tube  
(2) TF3: TO-220F  
(1)Packing Type  
(2)Package Type  
(3) x: refer to Classification of hFE  
(4) Halogen Free, L: Lead Free  
(3)Rank  
(4)Lead Free  
www.unisonic.com.tw  
Copyright © 2011 Unisonic Technologies Co., Ltd  
1 of 2  
QW-R219-010.a  
2SB1017  
Preliminary  
PNP EPITAXIAL SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
-80  
-80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
-5  
V
-4  
A
Base Current  
IB  
-0.4  
25  
A
Collector Dissipation (TC=25°C)  
Junction Temperature  
Storage Temperature  
PC  
W
°C  
°C  
TJ  
150  
TST  
-55 ~ 150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
BVCEO  
ICBO  
TEST CONDITIONS  
IC=-50mA, IB=0  
MIN TYP MAX  
UNIT  
V
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
-80  
VCB=-80V, IE=0  
-30  
µA  
Emitter Cut-off Current  
IEBO  
VEB=-5V, IC=0  
-100  
µA  
hFE1  
VCE=-5V, IC=-0.5A  
VCE=-5V, IC=-3A  
IC=-3A, IB=-0.3A  
VCE=-5V, IC =-3A  
VCE=-5V, IC =-0.5A  
VCB=-10V, f=1MHz  
40  
15  
240  
DC Current Gain  
hFE2  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
VCE(sat)  
VBE(on)  
fT  
-1  
-1  
-1.7  
-1.5  
V
V
Current Gain Bandwidth Product  
Output Capacitance  
9
MHz  
pF  
Cob  
130  
„
HFE CLASSIFICATION  
Classification  
hFE1  
R
O
Y
40 ~ 80  
70 ~ 140  
120 ~ 240  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 2  
QW-R219-010.a  
www.unisonic.com.tw  

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