2SA684L-S-AB3-R [UTC]

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE PACKAGE-3;


型号：	2SA684L-S-AB3-R
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE PACKAGE-3 放大器晶体管
文件：	总5页 (文件大小：257K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SA684

PNP SILICON TRANSISTOR

DESCRIPTION

The UTC 2SA684 is power amplifier and driver.

FEATURES

* Automatic insertion by radial taping possible.

* Complementary pair with 2SC1384

Lead-free:

2SA684L

Halogen-free: 2SA684G

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-89

Packing

Normal

Lead Free

Halogen Free

2SA684-x-AB3-R 2SA684L-x-AB3-R 2SA684G-x-AB3-R

Tape Reel

Tape Box

Bulk

2SA684-x-T9N-B 2SA684L-x-T9N-B 2SA684G-x-T9N-B TO-92NL

2SA684-x-T9N-K 2SA684L-x-T9N-K 2SA684G-x-T9N-K TO-92NL

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2SA684

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS ( Ta=25℃,unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CP

RATINGS

-60

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Collector Current

Collector Current (DC)

-50

-5

-1.5

I_C

-1

SOT-89

500

℃

Collector Dissipation

P_C

TO-92NL

1000

+150

-55 ~ +150

Junction Temperature

Storage Temperature

T_J

T_STG

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

BV_CBOI_C=-10μA, I_E=0

BV_CEOI_C=-2mA, I_B=0

BV_EBOI_E=-10μA, I_C=0

-60

-50

-5

I_CBO

h_FE1

h_FE2

V_CB=-20V, I_E=0

-0.1

340

μA

V_CE=-10V, I_C=-500mA

V_CE=-5V, I_C=-1A

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

V_CE(SAT)I_C=-0.5A, I_B=-50mA

V_BE(SAT)I_C=-0.5A, I_B=-50mA

-0.2

-0.4

-0.85 -1.2

200

f_T

V_CE=-10V, I_B=50mA, f=200MHz

V_CB=-10V, I_E=0, f=1MHz

MHz

C_ob

CLASSIFICATION OF h_FE1

RANK

120-240

RANGE

85-170

170-340

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2SA684

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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2SA684

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

Collector to Emitter Voltage vs.

Base to Emitter Resistance

Collector to Emitter Current vs.

Ambient Temperature

10⁴

-120

I_C=-10mA

Ta=25℃

V_CE=-10V

-100

-80

10³

10²

-60

-40

-20

10 30

0.1 0.3

100

20 40 60 80 100 120 140 160

Base to Emitter Resistance, R_BE(KΩ)

Ambient Temperature, Ta (℃)

Area Of Safe Operation (ASO)

-10

Single Pulse

Ta=25℃

-3

-1

I_CP

t=10ms

-0.3

t=1s

-0.1

-0.03

-0.01

-0.003

-0.001

-1 -3 -10 -30

-0.1 -0.3

-100

Collector To Emitter Voltage, V_CE(V)

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2SA684

PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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