2SA684-R-T9N-B [UTC]
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92NL, 3 PIN;型号: | 2SA684-R-T9N-B |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92NL, 3 PIN |
文件: | 总5页 (文件大小:257K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA684
PNP SILICON TRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC 2SA684 is power amplifier and driver.
FEATURES
* Automatic insertion by radial taping possible.
* Complementary pair with 2SC1384
Lead-free:
2SA684L
Halogen-free: 2SA684G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-89
Packing
Normal
Lead Free
Halogen Free
1
B
E
E
2
C
C
C
3
E
B
B
2SA684-x-AB3-R 2SA684L-x-AB3-R 2SA684G-x-AB3-R
Tape Reel
Tape Box
Bulk
2SA684-x-T9N-B 2SA684L-x-T9N-B 2SA684G-x-T9N-B TO-92NL
2SA684-x-T9N-K 2SA684L-x-T9N-K 2SA684G-x-T9N-K TO-92NL
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R211-006.C
2SA684
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25℃,unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICP
RATINGS
-60
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
Collector Current (DC)
-50
V
-5
V
-1.5
A
IC
-1
A
SOT-89
500
mW
mW
℃
Collector Dissipation
PC
TO-92NL
1000
+150
-55 ~ +150
Junction Temperature
Storage Temperature
TJ
TSTG
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC=-10μA, IE=0
BVCEO IC=-2mA, IB=0
BVEBO IE=-10μA, IC =0
-60
-50
-5
V
V
V
ICBO
hFE1
hFE2
VCB=-20V, IE=0
-0.1
340
μA
VCE=-10V, IC=-500mA
VCE=-5V, IC=-1A
85
50
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=-0.5A, IB=-50mA
VBE(SAT) IC=-0.5A, IB=-50mA
-0.2
-0.4
V
V
-0.85 -1.2
200
fT
VCE=-10V, IB=50mA, f=200MHz
VCB=-10V, IE=0, f=1MHz
MHz
pF
Cob
20
30
CLASSIFICATION OF hFE1
RANK
Q
R
120-240
S
RANGE
85-170
170-340
UNISONIC TECHNOLOGIES CO., LTD
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QW-R211-006.C
www.unisonic.com.tw
2SA684
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES O., LTD
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QW-R211-006.C
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2SA684
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
Collector to Emitter Current vs.
Ambient Temperature
104
-120
IC=-10mA
Ta=25℃
VCE=-10V
-100
-80
103
102
10
1
-60
-40
-20
0
1
3
10 30
0.1 0.3
100
0
20 40 60 80 100 120 140 160
Base to Emitter Resistance, RBE (KΩ)
Ambient Temperature, Ta (℃)
Area Of Safe Operation (ASO)
-10
Single Pulse
Ta=25℃
-3
-1
ICP
t=10ms
-0.3
t=1s
-0.1
-0.03
-0.01
-0.003
-0.001
-1 -3 -10 -30
-0.1 -0.3
-100
Collector To Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R211-006.C
www.unisonic.com.tw
2SA684
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R211-006.C
www.unisonic.com.tw
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