2SA1693G-O-T3P-T [UTC]
Power Bipolar Transistor;
| 型号： | 2SA1693G-O-T3P-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor 局域网 放大器 晶体管 |
| 文件： | 总3页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1693
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
PLANAR TRANSISTOR
DESCRIPTION
The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it
uses UTC’s advanced technology to provide the customers with high
DC current gain and high collector-base breakdown voltage, etc.
The UTC 2SA1693 is suitable for audio and general purpose, etc.
FEATURES
* High DC current gain
* High collector-base breakdown voltage
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-3P
Packing
Tube
Lead Free
Halogen Free
2SA1693G-x-T3P-T
1
2
3
2SA1693L-x-T3P-T
B
C
E
Note: Pin Assignment: B: Base C: Collector E: Emitter
www.unisonic.com.tw
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R214-017.b
2SA1693
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-80
-80
V
-6
V
-6
A
Base Current
IB
-3
A
Collector Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Pc
60
W
°C
°C
TJ
150
-55 ~150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=-80V
VEB=-6V
MIN TYP MAX UNIT
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
-10
-10
µA
µA
V
IEBO
BVCEO IC=-50mA
-80
50
hFE
VCE=-4V, IC=-2A
180
-1.5
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=-2A, IB=-0.2A
V
MHz
pF
fT
Cob
tON
tS
VCE=-12V, IE=0.5A
VCB=-10V, f=1MHz
20
150
0.18
1.10
0.21
Turn-on time
µS
VCC=-30V, RL=10Ω, IC=-3A,
Switching time
Storage time
Fall time
µS
IB1=0.3A IB2=0.3A
tF
µS
CLASSIFICATION OF hFE
RANK
O
P
Y
RANGE
50~100
70~140
90~180
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R214-017.b
www.unisonic.com.tw
2SA1693
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
TEST CIRCUIT
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R214-017.b
www.unisonic.com.tw
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