2SA1300Y(SOT-89) [UTC]

Transistor;
2SA1300Y(SOT-89)
型号: 2SA1300Y(SOT-89)
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Transistor

文件: 总3页 (文件大小:109K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR  
SILICON PNP EPITAXAL TYPE  
DESCRIPTION  
*Strobo Flash Applications.  
*Medium Power Amplifier Applications.  
1
FEATURES  
*High DC Current Gain and Excellent hFE Linearity.  
*hFE(1)=140-600, (VCE= -1V,IC= -0.5A)  
*hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)  
*Low Saturation Voltage  
*VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA)  
SOT-89  
1: Emitter 2: Collector 3:Base  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCES  
VCEO  
VEBO  
Ic  
RATIOS  
-20  
-20  
-10  
-6  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
A
DC  
-2  
-5  
Pulsed (Note)  
lcP  
Base Current  
Collector Power Dissipation  
Junction Temperature  
IB  
Pc  
Tj  
Tstg  
-2  
A
mW  
°C  
750  
150  
-55~150  
Storage Temperature Range  
°C  
Note :Pulse Width= 10ms(Max.),Duty Cycle=30%(Max.)  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
SYMBOL  
TEST CONDITIONS  
IC=10mA, IB=0  
MIN  
TYP  
-
-
MAX UNIT  
PARAMETER  
Collector-emitter breakdown voltage V(BR)CEO  
Emitter-collector breakdown voltage V(BR)EBO  
-10  
-
-
V
V
IE= -1mA, IC=0  
-6  
Collector cut-off current  
Emitter cut-off current  
DC current Gain  
ICBO  
IEBO  
hFE1  
hFE2  
VCE(sat)  
VBE  
VCE = -20V, IE =0  
VBE = -6V, IC =0  
-
-
-
-
-
-100  
-100  
600  
-
-0.5  
-1.5  
-
nA  
nA  
VCE= -1V, Ic=0.5A  
VCE= -1V, Ic= -4A  
Ic= -2A, IB= -50mA  
VCE= -1V, Ic= -2A  
VCE= -1V,Ic= -0.5A  
VCE= -10V, IE=0, f=1MHz  
140  
60  
-
-
-
120  
-0.2  
-0.83  
140  
50  
Collector-emitter saturation voltage  
Base-emitter voltage  
Current gain bandwidth product  
Output capacitance  
V
V
MHz  
pF  
fT  
Cob  
-
-
CLASSIFICATIONS OF hFE1  
RANK  
Y
GR  
BL  
1
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-012,A  
UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR  
RANGE  
140-280  
200-400  
300-600  
- continued -  
CHARACTERITICS CURVE  
2
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-012,A  
UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
3
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-012,A  

相关型号:

2SA1300Y-BP

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
MCC

2SA1300_07

Strobe Flash Applications Medium Power Amplifier Applications
TOSHIBA

2SA1300_11

SILICON PNP EPITAXAL TYPE
UTC

2SA1301

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
Wing Shing

2SA1301

isc Silicon PNP Power Transistor
ISC

2SA1301

Silicon PNP Power Transistors
JMNIC

2SA1301

Silicon PNP Power Transistors
SAVANTIC

2SA1301F

TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 12A I(C) | SOT-186VAR
ETC

2SA1301R

Transistor
ISC

2SA1302

POWER TRANSISTORS(15A,200V,150W)
MOSPEC

2SA1302

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
Wing Shing

2SA1302

isc Silicon PNP Power Transistor
ISC