2SA1020Y [UTC]

Transistor;
2SA1020Y
型号: 2SA1020Y
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Transistor

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中文:  中文翻译
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UTC2SA1020  
PNPEPITAXIAL SILICON TRANSISTOR  
SILICON PNP EPITAXIAL  
TRANSISTOR  
DESCRIPTION  
The UTC 2SA1020 is designed for power amplifier and  
power switching applications.  
FEATURES  
1
*Low collector saturation voltage:  
VCE(sat)=-0.5V(max.) (IC=-1A)  
*High speed switching time: tstg=1.0µs(Typ.)  
*Complement to UTC 2SC2655  
TO-92NL  
1:EMITTER 2:COLLECTOR 3:BASE  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
VALUE  
UNIT  
V
V
V
A
-50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-50  
-5  
-2  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
PC  
Tj  
TSTG  
0.9  
150  
-55 ~ +150  
W
°C  
°C  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector cut-off current  
Emitter cut-off current  
Collector to emitter breakdown  
voltage  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=-50V, IE=0  
VEB=-5V, IC=0  
MIN TYP MAX UNIT  
-1.0  
-1.0  
µA  
µA  
V
IEBO  
V(BR)CEO  
Ic=-10mA, IB=0  
-50  
DC Current Gain  
hFE1  
hFE2  
VCE(sat)  
VCE=-2V, IC=-0.5A  
VCE=-2V, IC=-1.5A  
Ic=-1A, IB=-0.05A  
70  
40  
240  
-0.5  
-1.2  
Collector to emitter saturation  
voltage  
Base to emitter saturation voltage  
Transition frequency  
Collector output capacitance  
Switching time  
V
VBE(sat)  
fT  
Cob  
ton  
tstg  
tf  
Ic=-1A, IB=-0.05A  
VCE=-2V, Ic=-0.5A  
VCB=-10V, IE=0, f=1MHz  
V
MHz  
pF  
µs  
µs  
100  
40  
0.1  
1.0  
0.1  
Turn-on time  
Storage time  
Fall time  
µs  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R211-007,A  
UTC2SA1020  
PNPEPITAXIAL SILICON TRANSISTOR  
CLASSIFICATION OF hFE1  
RANK  
O
Y
RANGE  
70 - 140  
120 - 240  
TYPICAL PERFORMANCE CHARACTERISTICS  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R211-007,A  
UTC2SA1020  
PNPEPITAXIAL SILICON TRANSISTOR  
3
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R211-007,A  
UTC2SA1020  
PNPEPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
4
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R211-007,A  

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