2SA1020G-Y-AB3-R [UTC]
Small Signal Bipolar Transistor, 2A I(C), PNP,;型号: | 2SA1020G-Y-AB3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 2A I(C), PNP, 开关 晶体管 |
文件: | 总4页 (文件大小:634K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1020
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power
switching applications.
FEATURES
*Low collector saturation voltage:
CE(SAT)=-0.5V(MAX) (IC=-1A)
V
*High speed switching time: tSTG=1.0s(TYP)
*Complement to UTC 2SC2655
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
E
B
E
E
2
B
C
C
C
3
C
E
B
B
2SA1020L-x-AE3-R
2SA1020L-x-AB3-R
2SA1020L-x-T9N-B
2SA1020L-x-T9N-K
2SA1020G-x-AE3-R
2SA1020G-x-AB3-R
2SA1020G-x-T9N-B
2SA1020G-x-T9N-K
SOT-23
SOT-89
Tape Reel
Tape Reel
Tape Box
Bulk
TO-92NL
TO-92NL
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MARKING INFORMATION
PACKAGE
MARKING
A10
1
L: Lead Free
G: Halogen Free
SOT-23
SOT-89
TO-92NL
www.unisonic.com.tw
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R211-007.F
2SA1020
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Ic
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
-50
V
-5
V
-2
A
SOT-23
SOT-89
TO-92NL
300
mW
mW
mW
C
Collector Power Dissipation
PC
500
900
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
IC=-10mA, IB=0
MIN TYP MAX UNIT
Collector to Emitter Breakdown Voltage
Collector Cut-off Current
-50
V
-1.0 μA
-1.0 μA
240
VCB=-50V, IE=0
VEB=-5V, IC=0
Emitter Cut-off Current
IEBO
hFE1
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
70
40
DC Current Gain
hFE2
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
VCE(SAT) IC=-1A, IB=-0.05A
-0.5
-1.2
V
V
VBE(SAT)
fT
IC=-1A, IB=-0.05A
VCE=-2V, Ic=-0.5A
100
40
MHz
pF
Collector Output Capacitance
COB
VCB=-10V, IE=0, f=1MHz
Turn-on Time
Switching Time Storage Time
Fall Time
tON
tSTG
tF
0.1
1.0
0.1
μs
μs
μs
CLASSIFICATION OF hFE1
RANK
O
Y
RANGE
70 - 140
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R211-007.F
www.unisonic.com.tw
2SA1020
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R211-007.F
www.unisonic.com.tw
2SA1020
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R211-007.F
www.unisonic.com.tw
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