2SA1012L-Y-TF3-R [UTC]
HIGH CURRENT SWITCHING APPLICATION; 大电流开关应用型号: | 2SA1012L-Y-TF3-R |
厂家: | Unisonic Technologies |
描述: | HIGH CURRENT SWITCHING APPLICATION |
文件: | 总4页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1012
PNP SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
1
TO- 251
.
ꢀ FEATURES
1
TO-252
*Low collector saturation voltage
VCE(SAT)=-0.4V(max.) at Ic=-3A
*High speed switching time: tS=1.0µs(Typ.)
*Complementary to 2SC2562
1
TO-220
1
TO-220F
*Pb-free plating product number: 2SA1012L
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
B
B
B
B
B
2
3
E
E
E
E
E
2SA1012-x-TA3-T
2SA1012-x-TF3-T
2SA1012-x-TM3-T
2SA1012-x-TN3-R
2SA1012-x-TN3-T
2SA1012L-x-TA3-T
2SA1012L-x-TF3-T
2SA1012L-x-TM3-T
2SA1012L-x-TN3-R
2SA1012L-x-TN3-T
TO-220
TO-220F
TO-251
TO-252
TO-252
Tube
Tube
C
C
C
C
C
Tube
Tape Reel
Tube
2SA1012L-x-TA3-T
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Rank
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) x: reference to Classification of hFE1
(4) L: Lead Free Plating, Blank: Pb/Sn
(4)Lead Plating
www.unisonic.com.tw
1 of 4
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R203-015,E
2SA1012
PNP SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
-60
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Power Dissipation
-50
V
-5
-5
V
A
PD
25
W
℃
℃
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
-60
-50
-5
TYP
MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=-100µA, IE=0
BVCEO IC=-10mA, IB=0
BVEBO IE=-100µA, IC=0
V
V
V
ICBO
IEBO
hFE1
hFE2
VCB=-50V, IE=0
VEB=-5V, IC=0
-1.0
-1.0
240
µA
µA
Emitter Cut-off Current
VCE=-1V, IC=-1A
VCE=-1V, IC=-3A
70
30
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
VCE (SAT) IC=-3A, IB=-0.15A
VBE (SAT) IC=-3A, IB=-0.15A
-0.2
-0.9
60
-0.4
-1.2
V
V
fT
Cob
tON
tS
VCE=-4V, IC=-1A
MHz
pF
µs
Collector output capacitance
Turn-on time
VCB=-10V, IE=0, f=1MHz
170
0.1
1.0
Storage time
µs
Switching time
Fall time
tF
0.1
µs
ꢀ
CLASSIFICATION of hFE1
RANK
O
Y
RANGE
70 ~ 140
120 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R203-015,E
2SA1012
■ TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R203-015,E
2SA1012
PNP SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERICS( cont.)
fT-Ic
10000
3000
1000
V
CE= -5V
f=1MHz
Tc=25℃
300
100
30
10
3
1
-1
Collector current Ic(A)
-3 -10
-0.01 -0.03 -0.1 -0.3
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW-R203-015,E
相关型号:
©2020 ICPDF网 联系我们和版权申明