2SA1012L-O-TM3-T [UTC]

HIGH CURRENT SWITCHING APPLICATION; 大电流开关应用


型号：	2SA1012L-O-TM3-T
厂家：	Unisonic Technologies
描述：	HIGH CURRENT SWITCHING APPLICATION 大电流开关应用开关
文件：	总4页 (文件大小：111K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SA1012

PNP SILICON TRANSISTOR

HIGH CURRENT SWITCHING

APPLICATION

TO- 251

ꢀ FEATURES

TO-252

*Low collector saturation voltage

V_CE(SAT)=-0.4V(max.) at Ic=-3A

*High speed switching time: t_S=1.0µs(Typ.)

*Complementary to 2SC2562

TO-220

TO-220F

*Pb-free plating product number: 2SA1012L

ꢀ ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

2SA1012-x-TA3-T

2SA1012-x-TF3-T

2SA1012-x-TM3-T

2SA1012-x-TN3-R

2SA1012-x-TN3-T

2SA1012L-x-TA3-T

2SA1012L-x-TF3-T

2SA1012L-x-TM3-T

2SA1012L-x-TN3-R

2SA1012L-x-TN3-T

TO-220

TO-220F

TO-251

TO-252

Tube

Tape Reel

Tube

2SA1012L-x-TA3-T

(1) T: Tube, R: Tape Reel

(1)Packing Type

(2)Package Type

(3)Rank

(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,

TN 3: TO-252

(3) x: reference to Classification of h^FE1

(4) L: Lead Free Plating, Blank: Pb/Sn

(4)Lead Plating

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QW-R203-015,E

2SA1012

PNP SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

-60

Collector-Emitter Voltage

Peak Collector Current

Power Dissipation

-50

-5

P_D

℃

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

-60

-50

-5

TYP

MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BV_CBOI_C=-100µA, I_E=0

BV_CEOI_C=-10mA, I_B=0

BV_EBOI_E=-100µA, I_C=0

I_CBO

I_EBO

h_FE1

h_FE2

V_CB=-50V, I_E=0

V_EB=-5V, I_C=0

-1.0

240

µA

Emitter Cut-off Current

V_CE=-1V, I_C=-1A

V_CE=-1V, I_C=-3A

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition frequency

V_{CE (SAT)}I_C=-3A, I_B=-0.15A

V_{BE (SAT)}I_C=-3A, I_B=-0.15A

-0.2

-0.9

-0.4

-1.2

f_T

Cob

t_ON

t_S

V_CE=-4V, I_C=-1A

MHz

µs

Collector output capacitance

Turn-on time

V_CB=-10V, I_E=0, f=1MHz

170

0.1

1.0

Storage time

µs

Switching time

Fall time

t_F

0.1

µs

ꢀ

CLASSIFICATION of h_FE1

RANK

RANGE

70 ~ 140

120 ~ 240

UNISONIC TECHNOLOGIES CO., LTD

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QW-R203-015,E

2SA1012

■ TYPICAL CHARACTERISTICS

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

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QW-R203-015,E

2SA1012

PNP SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERICS( cont.)

fT-Ic

10000

3000

1000

CE= -5V

f=1MHz

Tc=25℃

300

100

-1

Collector current Ic(A)

-3 -10

-0.01 -0.03 -0.1 -0.3

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R203-015,E

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