2SA1012G-O-TF3-T [UTC]
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN;型号: | 2SA1012G-O-TF3-T |
厂家: | Unisonic Technologies |
描述: | Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN 局域网 开关 晶体管 |
文件: | 总4页 (文件大小:310K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1012
PNP SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
.
FEATURES
*Low Collector Saturation Voltage
VCE(SAT)=-0.4V(max.) At Ic=-3A
*High Speed Switching Time: tS=1.0s(Typ.)
*Complementary To 2SC2562
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free Plating
2SA1012L-x-TA3-T
2SA1012L-x-TF3-T
2SA1012L-x-TM3-T
2SA1012L-x-TN3-R
2SA1012L-x-TN3-T
Halogen Free
1
B
B
B
B
B
2
3
E
E
E
E
E
2SA1012G-x-TA3-T
2SA1012G-x-TF3-T
2SA1012G-x-TM3-T
2SA1012G-x-TN3-R
2SA1012G-x-TN3-T
TO-220
TO-220F
TO-251
TO-252
TO-252
Tube
Tube
C
C
C
C
C
Tube
Tape Reel
Tube
2SA1012L-x-TA3-T
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Rank
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN3: TO-252
(3) x: reference to Classification of hFE1
(4) L: Lead Free Plating, G: Halogen Free
(4)Lead Plating
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R203-015,I
2SA1012
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Power Dissipation
-60
-50
V
-5
-5
V
A
PD
25
W
°C
°C
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=-100μA, IE=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-60
-50
-5
V
V
IC=-10mA, IB=0
IE=-100μA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
V
-1.0
-1.0
360
μA
μA
Emitter Cut-off Current
IEBO
hFE1
VCE=-1V, IC=-1A
VCE=-1V, IC=-3A
70
30
DC Current Gain
hFE2
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
VCE (SAT) IC=-3A, IB=-0.15A
VBE (SAT) IC=-3A, IB=-0.15A
-0.2
-0.9
60
-0.4
-1.2
V
V
fT
VCE=-4V, IC=-1A
MHz
pF
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
170
Turn-on time
Switching time Storage time
Fall time
tON
tS
0.1
1.0
0.1
μs
μs
μs
tF
CLASSIFICATION of hFE1
RANK
O
Y
R
R1
RANGE
70 ~ 140
120 ~ 240
180 ~ 360
>255
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R203-015,I
2SA1012
■ TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R203-015,I
2SA1012
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R203-015,I
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