2N90L-TA3-T [UTC]
2A, 900V N-CHANNEL POWER MOSFET; 2A ， 900V N沟道功率MOSFET
| 型号： | 2N90L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 2A, 900V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N90
Preliminary
Power MOSFET
2A, 900V N-CHANNEL
POWER MOSFET
1
TO-252
TO-251
DESCRIPTION
The UTC 2N90 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
1
1
The UTC 2N90 is universally applied in high efficiency switch
mode power supply.
TO-220
FEATURES
* RDS(ON) = 7.2Ω @VGS = 10 V
* Typically 5.5 pF low CRSS
* High switching speed
* Typically 12nC low gate charge
* Improved dv/dt capability
* 100% avalanche tested
1
TO-220F
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
2N90L-TA3-T
2N90L-TF3-T
2N90L-TM3-T
2N90L-TN3-R
2N90L-TN3-T
2N90G-TA3-T
2N90G-TF3-T
2N90G-TM3-T
2N90G-TN3-R
2N90G-TN3-T
TO-220
TO-220F
TO-251
TO-252
TO-252
G
G
G
G
G
D
D
D
D
D
Tube
Tube
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-478.c
2N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
900
UNIT
V
Drain-Source Voltage (Note 2)
Gate-Source Voltage
±30
V
Continuous
Pulsed (Note 2)
2.2
A
Drain Current
IDM
8.8
A
Avalanche Current (Note 2)
IAR
2.2
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
170
mJ
mJ
V/ns
Avalanche Energy
EAR
8.5
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
4.0
85
Power Dissipation
TO-220F
PD
25
W
TO-251/ TO-252
43
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 65mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 2.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-220F
TO-251/ TO-252
TO-220F
SYMBOL
RATINGS
62.5
110
UNIT
°C/W
Junction to Ambient
θJA
1.47
5
Junction to Case
TO-220F
θJC
°C/W
TO-251/ TO-252
2.85
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2N90
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
900
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
1.0
V/°C
V
DS=900V, VGS=0V
VDS=720V, TC=125°C
GS=+30V, VDS=0V
10
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
IGSS
µA
100
Forward
Reverse
V
+100 nA
-100 nA
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=1.1A
3.0
5.0
V
Ω
S
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
5.6 7.2
2.0
VDS=50V, ID=1.1A (Note 1)
CISS
COSS
CRSS
390 500 pF
45 60 pF
5.5 7.0 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
12
2.8
6.1
15
35
20
30
15
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=720V, ID=2.2A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 1,2)
40
80
50
70
VDD=450V, ID=2.2A, RG=25Ω
(Note 1,2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.2
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.8
1.4
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
trr
IS=2.2A, VGS=0V
V
400
1.6
ns
µC
IS=2.2A,VGS=0V,dIF/dt=100A/µs
(Note 1)
Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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2N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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2N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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2N90
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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