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2N7000ZG-T92-R [UTC]

115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET; 115米安培， 60伏特N沟道增强型MOSFET
2N7000ZG-T92-R
型号： 2N7000ZG-T92-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET
115米安培， 60伏特N沟道增强型MOSFET
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UNISONIC TECHNOLOGIES CO., LTD  
2N7000Z  
Power MOSFET  
115m Amps, 60 Volts  
N-CHANNEL ENHANCEMENT  
MODE MOSFET  
„
DESCRIPTION  
1
The UTC 2N7000Z has been designed to minimize on-state  
resistance to provide rugged, reliable, and fast switching  
performance. It can be used in most applications requiring up to  
400mA DC and can deliver pulsed currents up to 2A. The product is  
particularly suited for low voltage, low current applications, such as  
small servo motor control, power MOSFET gate drivers and other  
switching applications  
TO-92  
„
FEATURES  
*High density cell design for low RDS(ON)  
*Voltage controlled small signal switch  
*Rugged and reliable  
*High saturation current capability  
„
SYMBOL  
3.Drain  
2.Gate  
1.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
2N7000ZG-T92-B  
2N7000ZG-T92-K  
2N7000ZG-T92-R  
1
S
S
S
2
3
D
D
D
2N7000ZL-T92-B  
2N7000ZL-T92-K  
2N7000ZL-T92-R  
TO-92  
TO-92  
TO-92  
G
G
G
Tape Box  
Bulk  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 3  
Copyright © 2011 Unisonic Technologies Co., Ltd.  
QW-R502-535.a  
2N7000Z  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS  
„
( Ta=25°C )  
SYMBOL  
PARAMETER  
RATINGS  
60  
UNIT  
V
Drain-Source Voltage  
VDSS  
VDGR  
Drain-Gate Voltage (RGS≤1MΩ)  
60  
V
Continuous  
±20  
±40  
115  
800  
400  
3.2  
V
Gate -Source Voltage  
VGS  
ID  
Non Repetitive (tp<50μs)  
Continuous  
V
mA  
mA  
mW  
mW/°C  
Maximum Drain Current  
Pulsed  
Maximum Power Dissipation  
Derated above 25°C  
PD  
Operating and Storage Temperature  
TJ,TSTG  
-55 ~ +150  
°C  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
312.5  
UNIT  
Junction to Ambient  
θJA  
°C/W  
ELECTRICAL CHARACTERISTICS  
„
(Ta =25°C, unless otherwise specified)  
TEST CONDITIONS MIN  
PARAMETER  
SYMBOL  
TYP MAX UNIT  
V
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
BVDSS VGS=0V,ID=10 μA  
60  
V
DS=60V, VGS =0V  
1
μA  
mA  
μA  
μA  
Drain-Source Leakage Current  
IDSS  
TJ=125°C  
0.5  
10  
Gate-Body leakage, Forward  
Gate-Body leakage Reverse  
ON CHARACTERISTICS (Note)  
Gate Threshold Voltage  
IGSSF  
IGSSR  
VGS =20V, VDS=0V  
VGS =-20V, VDS=0V  
-10  
VGS(TH) VDS =VGS, ID=250μA  
1
2.1  
1.2  
2.5  
7.5  
V
VGS =10V, ID=500mA  
TJ=100°C  
1.7  
13.5  
7.5  
13.5  
3.75  
1.5  
Static Drain-Source On-Resistance  
Drain-Source On-Voltage  
RDS(ON)  
Ω
VGS =5.0V, ID=50mA  
1.7  
2.4  
TJ=100°C  
VGS = 10V, ID=500mA  
0.6  
V
VDS(ON)  
ID(ON)  
VGS = 5.0V, ID=50mA  
0.09  
2700  
On-State Drain Current  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VGS=10V, VDS≧2VDS(ON)  
500  
mA  
CISS  
COSS  
CRSS  
20  
11  
4
50  
25  
5
pF  
pF  
pF  
VDS=25V,VGS=0V, f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
V
DD=30V, RL=150Ω,  
Turn-On Time  
Turn-Off Time  
tON  
20  
20  
ns  
ns  
ID=200mA, VGS=10V, RGEN=25Ω  
V
V
DD=30V, RL=150Ω, ID=200mA,  
GS=10V, RGEN=25Ω  
tOFF  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Drain-Source Diode Forward  
Voltage  
VSD  
Is  
VGS=0V, Is=115mA(Note )  
0.88  
1.5  
115  
0.8  
V
mA  
A
Maximum Continuous Drain-Source  
Diode Forward Current  
Maximum Pulsed Drain-Source  
Diode Forward Current  
ISM  
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R502-535.a  
www.unisonic.com.tw  
2N7000Z  
Power MOSFET  
TYPICAL CHARACTERISTICS  
„
Switching Waveforms  
VDD  
tON  
tOFF  
RL  
tD(ON)  
tR  
tD(OFF)  
tF  
VIN  
90%  
90%  
VOUT  
D
VGS  
Output ,VOUT  
Input ,VIN  
10%  
10%  
90%  
RGEN  
Inverted  
DUT  
G
50%  
50%  
S
10%  
Pulse Width  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R502-535.a  
www.unisonic.com.tw  

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